RN49A1(TE85L,F)

RN49A1(TE85L,F)

$0.29
  • Description:PNP + NPN BRT Q1BSR=2.2KOHM Q1BE
  • Series:-

SKU:5fb8d66e7663 Category: Brand:

  
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Product Detailed Parameters

  • Description:PNP + NPN BRT Q1BSR=2.2KOHM Q1BE
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:1 NPN, 1 PNP - Pre-Biased (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Resistor - Base (R1):2.2kOhms, 22kOhms
  • Resistor - Emitter Base (R2):47kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 10mA, 5V
  • pa_vce-saturation-max-ib-ic:
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:200MHz, 250MHz
  • Power - Max:200mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:US6

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RN49A1(TE85L,F)

Overview

The RN49A1(TE85L,F) is a pre-biased bipolar transistor array manufactured by Toshiba Semiconductor and Storage. It integrates one PNP and one NPN transistor within a single surface-mount package. The component features built-in bias resistors with a typical value of 2.2 kOhms for both transistors. This configuration simplifies circuit design by reducing the number of external components required. The device is designed for general-purpose switching applications in portable electronics.

Feature Summary

  • Integrates complementary PNP and NPN transistors in a single compact package
  • Includes built-in bias resistors to simplify circuit layout
  • Designed for high-density surface-mount assembly

Applications

  • General-purpose switching circuits
  • Portable electronic devices
  • Battery-powered equipment

Procurement Notes

Verify the specific suffix TE85L,F against the manufacturer's official datasheet to confirm the exact resistor values and packaging specifications. Ensure the ordering part number matches the required electrical characteristics and tape-and-reel format for automated assembly processes.

Selection Notes

Select this component when space constraints require combining two transistors with integrated biasing. It is suitable for designs needing simple logic level switching or driver stages where minimal external passive components are preferred to reduce board area and assembly complexity.

Part Context

This part belongs to Toshiba's series of pre-biased transistor arrays. These devices combine bipolar junction transistors with internal resistors to replace multiple discrete components. The USV package type indicates a small outline form factor suitable for modern compact consumer electronics and industrial control modules.

Replacement Considerations

Consult official cross-reference lists for direct substitutes. Verify that alternative parts match the PNP/NPN configuration, 2.2 kOhm resistor values, and USV package dimensions to ensure mechanical and electrical compatibility without redesign.

RN49A1(TE85L,F)RN49A1(TE85L,F)
$0.29
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