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The RN49A2 is a dual transistor array featuring an NPN and a PNP epitaxial silicon device within a single Ultra-Super-Mini package. Q1 (NPN) includes bias resistors R1 of 47 kΩ and R2 of 47 kΩ, while Q2 (PNP) incorporates R1 of 2.2 kΩ and R2 of 47 kΩ. The component supports a collector-emitter voltage of ±50 V and a continuous collector current of ±100 mA per transistor. Total power dissipation is rated at 200 mW with a junction temperature limit of 150 °C. Transition frequencies reach 250 MHz for the NPN and 200 MHz for the PNP unit.
Verify the specific ordering suffix against official documentation to confirm packaging details and compliance status. Confirm RoHS compatibility directly with the manufacturer or authorized distributor before procurement. Ensure the selected variant matches the required lead frame and marking specifications for your assembly process.
Select this component when space constraints require a dual-transistor solution with integrated biasing. Verify that the internal resistor values align with the target logic levels and drive requirements. Consider the total power dissipation rating when designing thermal management strategies for high-density layouts.
This part belongs to Toshiba's series of transistors with built-in bias resistors, designed to replace discrete transistor-resistor combinations. It serves as a direct functional equivalent to other industry-standard dual transistor arrays, facilitating easier schematic capture and reduced bill-of-materials complexity in consumer electronics.
RN49A2FE is listed as a similar specification part number by the manufacturer.