RURD620CC

$0.65

Description：DIODE ARRAY AVAL 200V 6A IPAK
Series：-

SKU:82f3c2ceb39e Category: Diode Arrays Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：DIODE ARRAY AVAL 200V 6A IPAK
Series：-
Mfr：onsemi
Package：Tube
Diode Configuration：1 Pair Common Cathode
Technology：Avalanche
Voltage - DC Reverse (Vr) (Max)：200 V
Current - Average Rectified (Io) (per Diode)：6A
Voltage - Forward (Vf) (Max) @ If：1 V @ 6 A
Speed：Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)：30 ns
Current - Reverse Leakage @ Vr：100 µA @ 200 V
Operating Temperature - Junction：-
Mounting Type：Through Hole
Package / Case：TO-251-3 Short Leads, IPAK, TO-251AA
Supplier Device Package：IPAK
Grade：-
Qualification：-

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RURD620CC

Overview

The RURD620CC is a dual ultrafast diode with soft recovery characteristics, featuring a peak repetitive reverse voltage of 200V and an average rectified forward current of 6A per leg. It utilizes silicon nitride passivated ion-implanted epitaxial planar construction to minimize ringing and electrical noise in power switching circuits. The device operates within a temperature range of -65°C to 175°C and includes avalanche energy rating capabilities.

Feature Summary

Ultrafast soft recovery characteristics reduce ringing and electrical noise
Silicon nitride passivated ion-implanted epitaxial planar construction
Avalanche energy rated for robust performance
Low forward voltage drop for improved efficiency

Applications

Freewheeling and clamping diodes
Switching power supplies
Power switching circuits

Procurement Notes

Verify the specific package type required for your design, as the base part number corresponds to the TO-251AA package. If tape and reel packaging is needed for the TO-252AA variant, ensure the correct suffix is included in the ordering information. Confirm that the component meets RoHS compliance requirements for your manufacturing process.

Selection Notes

Select this component when low stored charge and fast recovery are critical to minimizing power loss in switching transistors. Ensure the thermal management design supports the specified junction-to-case thermal resistance. Verify that the operating voltage does not exceed the 200V peak repetitive reverse voltage rating under all transient conditions.

Part Context

This component belongs to the family of ultrafast dual diodes designed for high-frequency power applications. It serves as a replacement for older developmental types like TA49037. The device is manufactured using planar construction techniques to ensure consistent performance and reliability in demanding electronic environments.