Single FETs, MOSFETs RX3L18BBGC16 product image

RX3L18BBGC16

$6.42
  • Description:NCH 60V 180A, TO-220AB, POWER MO
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tube

SKU:e912d3ce0017 Category: Brand:

  
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RX3L18BBGC16 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is NCH 60V 180A, TO-220AB, POWER MO. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for RX3L18BBGC16

  • Description:NCH 60V 180A, TO-220AB, POWER MO
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):60 V
  • Current - Continuous Drain (Id) @ 25°C:180A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:1.84mOhm @ 90A, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:160 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:11000 pF @ 30 V
  • FET Feature:-
  • Power Dissipation (Max):192W (Tc)
  • Operating Temperature:150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-220AB
  • Package / Case:TO-220-3

Single FETs, MOSFETs datasheet and documents for RX3L18BBGC16

RX3L18BBGC16

Single FETs, MOSFETs Overview

The RX3L18BBGC16 is a single N-channel power MOSFET manufactured by ROHM Semiconductor, utilizing silicon technology. It features a TO-220AB-3 through-hole package with three terminals. Key electrical parameters include a drain-source voltage (Vds) of 60 V and a continuous drain current (Id) of 240 A. The device exhibits a typical on-resistance (Rds(on)) of 1.84 mΩ at a gate-source voltage of 4.5 V. Additional specifications comprise a gate-source voltage range of ±20 V, a threshold voltage of 2.5 V, and a total gate charge of 160 nC. Power dissipation is rated at 192 W, with an operating temperature range from -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

  • Low on-resistance for efficient switching performance
  • High power handling capability in a standard through-hole package
  • Enhancement mode operation suitable for general switching applications

Single FETs, MOSFETs Applications

  • General purpose switching circuits
  • Power management systems requiring high current handling

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix and RoHS compliance status directly against the manufacturer's latest datasheet before procurement. Confirm that the component meets all required thermal and electrical specifications for the intended application environment. Ensure that sourcing channels provide authentic products with traceable documentation to guarantee reliability and performance consistency.

Single FETs, MOSFETs Selection Notes

Select this component when a 60 V N-channel MOSFET with high current capacity is required in a TO-220AB package. Consider the 1.84 mΩ on-resistance for conduction loss calculations at 4.5 V drive. Evaluate thermal management requirements based on the 192 W power dissipation rating and the specified junction temperature limits for reliable long-term operation.

Single FETs, MOSFETs Part Context

This part belongs to the RX3L series of N-channel power MOSFETs from ROHM Semiconductor. The series is characterized by low on-resistance and robust packaging options designed for switching applications. The RX3L18BBGC16 specifically denotes the variant with the GC16 suffix, indicating particular manufacturing or compliance attributes within the broader product line.

Single FETs, MOSFETs Replacement Considerations

The RX3L18BBG is listed as a similar level replacement with the same pinout and package. Verify functional equivalence and parameter alignment before substitution.

RX3L18BBGC16RX3L18BBGC16
$6.42
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