S25FL512SDSBHMC13

Memory IC Overview

The Infineon S25FL512SDSBHMC13 is a 512 Mb (64 MB) non-volatile NOR flash memory utilizing 65 nm MIRRORBIT technology and Eclipse architecture. It operates with a core voltage of 2.7 V to 3.6 V and versatile I/O supply from 1.65 V to 3.6 V. The device supports SPI Multi-I/O interfaces including Single, Dual, and Quad I/O modes, along with Double Data Rate (DDR) read commands for enhanced throughput. It features uniform 256-KB sector erasing, a 512-byte page programming buffer, and integrated hardware Error Correction Code (ECC). The component is housed in a 24-ball BGA package and supports industrial temperature ranges.

Memory IC Feature Summary

• Supports high-speed SPI Multi-I/O communication with Single, Dual, and Quad I/O modes, plus Double Data Rate (DDR) read capabilities.
• Features Eclipse architecture with a 512-byte Page Programming Buffer for efficient data writing operations.
• Includes Advanced Sector Protection (ASP) allowing individual sector control via boot code or password.
• Integrates automatic hardware Error Correction Code (ECC) generation for single-bit error correction.

Memory IC Applications

• Execute-In-Place (XIP) code execution
• Code shadowing applications
• Data storage systems

Memory IC Procurement Notes

Verify the specific suffix codes against official documentation to confirm package type, temperature range, and automotive qualification status. Ensure compatibility with host system voltage levels, particularly regarding the versatile I/O supply range. Confirm that the required interface modes, such as DDR or Quad I/O, are supported by the controller firmware.

Memory IC Selection Notes

Select this component when high-density storage is required alongside fast read performance through multi-line serial interfaces. Consider the Eclipse architecture benefits for improved program and erase speeds compared to prior generations. Evaluate the need for Advanced Sector Protection and integrated ECC if data integrity and security are critical requirements.

Memory IC Part Context

This device belongs to the S25FL512S FL-S family, which utilizes 65 nm process lithography. It maintains command set and footprint compatibility with previous S25FL-A, S25FL-K, and S25FL-P SPI families, facilitating migration. The FL-S series introduces extended addressing and AutoBoot features not present in earlier models.

Memory IC Replacement Considerations

S25FL512SDSMFM013

Memory IC FAQ

Does the S25FL512S support Deep Power Down?

No, the Deep Power Down function is not supported in the FL-S family devices.

What is the sector erase size for the 512-Mb density FL-S device?

The device uses uniform 256-KB logical sectors for erase operations.