S25FS128SAGNFI003

Memory IC Overview

The S25FS128SAGNFI003 is a 128 Mbit (16 MB) NOR flash memory utilizing 65-nm MIRRORBIT™ technology and the Eclipse architecture. It operates on a single 1.7 V to 2.0 V supply voltage and supports SPI Multi-I/O interfaces including Single, Dual, Quad, and DDR Quad I/O modes. The device features a configurable page programming buffer of 256 or 512 bytes, hybrid sector options with 4-KB/32-KB or uniform 64-KB/256-KB blocks, and Advanced Sector Protection (ASP). It includes an internal hardware ECC generator for single-bit error correction and offers 100,000 program-erase cycle endurance with a minimum 20-year data retention period.

Memory IC Feature Summary

• Supports high-speed read operations via Quad I/O and Double Data Rate (DDR) commands to match parallel interface performance while reducing signal count.
• Integrates an automatic hardware error correction code (ECC) generator capable of correcting single-bit errors during program operations.
• Provides flexible erase architectures with selectable hybrid or uniform sector sizes and Advanced Sector Protection (ASP) for permanent security configuration.

Memory IC Applications

• Execute-in-Place (XIP) applications requiring direct code execution from flash memory
• Code shadowing to RAM systems
• Storage of reprogrammable data in embedded environments

Memory IC Procurement Notes

Verify that the specific ordering suffix matches the required package type and temperature grade, as the FS-S family supports multiple configurations. Confirm compatibility with host system voltage levels, noting this device requires a nominal 1.8 V supply distinct from legacy 3.3 V parts. Ensure design accounts for the specific command subset differences compared to prior generation FL-S or FL-K families.

Memory IC Selection Notes

Select this component when a single 1.8 V supply is available and higher read throughput than standard SPI devices is required. The Eclipse architecture provides faster programming and erase rates compared to floating gate technologies. Consider the specific sector organization requirements, as the device supports both hybrid and uniform block layouts which affect software implementation.

Memory IC Part Context

This part belongs to the Infineon S25FS-S family of serial flash memories. It is designed as a successor to the FL-S, FL-K, and FL-P families, offering footprint and command subset compatibility while introducing a unified 1.8 V power domain and enhanced performance through the Eclipse architecture and MIRRORBIT™ technology.

Memory IC Replacement Considerations

Direct replacements include other S25FS128S variants with compatible packages and voltage ranges. Legacy migration from FL-S or FL-K families requires verification of command set support, specifically regarding the removal of Autoboot and Bank Address commands and the addition of ASP features.