S25FS512SAGBHI213

Memory IC Overview

The S25FS512SAGBHI213 is a 512 Mbit NOR flash memory device from the FS-S series, manufactured by Infineon Technologies. It features a Quad SPI interface with a maximum clock frequency of 133 MHz and supports synchronous timing. The device operates within a supply voltage range of 1.7 V to 2 V and utilizes a BGA-24 package for surface mount installation. It offers a storage capacity of 64 M x 8 bits and maintains an active read current of up to 100 mA. The component is rated for industrial temperatures between -40°C and +85°C.

Memory IC Feature Summary

• Supports high-speed Quad SPI communication with double data rate capabilities for efficient data transfer.
• Utilizes MirrorBit Eclipse technology for high-density non-volatile storage in a compact form factor.
• Includes advanced sector protection mechanisms to secure critical firmware and data regions.

Memory IC Applications

• Industrial control systems requiring reliable code execution
• Automotive infotainment and telematics units
• Network infrastructure equipment

Memory IC Procurement Notes

Verify the specific suffix codes against official datasheets to confirm package type, temperature grade, and lead finish. Ensure compatibility with system voltage rails, as this model operates at 1.8V nominal. Confirm moisture sensitivity levels and reflow profile requirements during assembly planning. Cross-reference part numbers with manufacturer databases to avoid counterfeit components.

Memory IC Selection Notes

Select this component when a 512 Mbit density is required with high-speed 133 MHz access times. It is suitable for designs needing 1.8V operation rather than 3.3V variants. Consider the BGA-24 package constraints for PCB layout. Compare against the FL-S series if 3.3V compatibility is necessary instead of low-voltage operation.

Memory IC Part Context

This part belongs to the S25FS512S family of NOR flash memories, which are designed for execute-in-place applications. The FS-S series specifically targets low-voltage environments, distinguishing it from the 3.3V FL-S counterparts. These devices are widely used in embedded systems where fast boot times and code execution directly from memory are critical performance factors.

Memory IC Replacement Considerations

Check for S25FL512SAGBHI213 if 3.3V operation is acceptable. Verify S25FS512SDSBHI213 for identical electrical specs but potential packaging differences. Always consult official substitution guides before replacing components to ensure pinout and timing compatibility.