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S25FS512SDSBHI213 is listed in the Memory IC range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is IC FLASH 512MBIT SPI/QUAD 24BGA. Review the specifications below when checking this part for your BOM.
The S25FS512SDSBHI213 is a 512 Mbit NOR flash memory device from the S25FS512S series, manufactured by Infineon Technologies. It utilizes MirrorBit Eclipse technology and features a Quad SPI interface with synchronous timing. The component operates within a voltage range of 1.7 V to 2 V and supports clock frequencies up to 80 MHz. It is housed in a 24-ball BGA package and is designed for industrial applications with an operating temperature range of -40°C to +85°C.
Verify the specific suffix codes against official Infineon documentation to confirm package type, temperature grade, and lead finish specifications. Ensure compatibility with system voltage requirements, as this variant operates at 1.8V. Confirm moisture sensitivity level handling procedures during assembly to prevent damage. Cross-reference the exact part number with current datasheets to validate availability and lifecycle status before finalizing procurement plans.
Select this component when a 512 Mbit density is required with low-voltage operation around 1.8V. It is suitable for designs prioritizing high read speeds via Quad SPI interfaces. Consider this part for industrial environments where the -40°C to +85°C temperature range is sufficient. Evaluate package constraints to ensure the 24-ball BGA footprint fits the board layout.
This device belongs to the S25FS512S family, which employs MirrorBit Eclipse technology to achieve high density in small packages. The FS-S series is characterized by its 1.8V operation and support for standard and fast Quad SPI protocols. It serves as a robust solution for general-purpose non-volatile memory needs in commercial and industrial sectors.
Check for S25FS512SDSBHV213 or S25FS512SAGBHM213 if different temperature grades or automotive qualifications are needed. Verify pinout and electrical characteristics match before substitution.
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