S25Q

Single Diodes Overview

The S25Q is a silicon standard recovery diode manufactured by GeneSiC Semiconductor. It features a DO-4 stud package with a maximum continuous forward current of 25 A and a repetitive peak reverse voltage rating of 800 V. The device supports an operating junction temperature range from -55 °C to 150 °C and includes a surge non-repetitive forward current capability of 373 A.

Single Diodes Feature Summary

• High surge current capability for robust performance under transient conditions
• DO-4 stud package design suitable for high-power thermal management
• Non-ESD sensitive construction for simplified handling

Single Diodes Applications

• Industrial power conversion systems
• General-purpose rectification in high-voltage circuits
• Power supply units requiring high surge tolerance

Single Diodes Procurement Notes

Verify the specific suffix designation when ordering, as it determines terminal polarity configuration. Confirm that the required reverse voltage rating matches the 800 V specification for the S25Q variant. Ensure mounting hardware compatibility with the DO-4 stud format and verify thermal interface requirements for the specified operating temperature range.

Single Diodes Selection Notes

Select this component for applications requiring a 25 A continuous current rating with an 800 V blocking voltage. Consider the DO-4 package for efficient heat dissipation in high-power environments. Evaluate the 373 A surge capability against potential inrush currents in the target circuit design to ensure adequate safety margins.

Single Diodes Part Context

This component belongs to the S25K through S25QR series of silicon standard recovery diodes. The series covers voltage ratings from 800 V to 1200 V within the same physical form factor. The S25Q specifically addresses the lower end of this voltage spectrum while maintaining identical current and thermal characteristics across the family.

Single Diodes Replacement Considerations

• S25M (R)
• S25K (R)