S26KL256SDABHI030

Memory IC Overview

The S26KL256SDABHI030 is a HyperFlash NOR memory device manufactured by Infineon Technologies, formerly part of the Spansion portfolio. It features a 256 Mbit capacity organized as 32M x 8 bits with an 8-bit data bus width. The component supports parallel synchronous interfaces operating at clock frequencies up to 100 MHz with a 96 ns access time. It functions within a voltage range of 2.7 V to 3.6 V and is qualified for automotive applications under AEC-Q100 standards. The device operates reliably across an extended temperature range from -40°C to +105°C and is housed in a compact 24-FBGA package.

Memory IC Feature Summary

• Supports high-speed parallel synchronous interface for rapid code execution
• Automotive-grade reliability certified under AEC-Q100 standards
• Designed for low-power operation with active read current specifications

Memory IC Applications

• Boot code storage in automotive electronic control units
• Firmware storage for industrial embedded systems
• Application code execution in IoT devices requiring fast random access

Memory IC Procurement Notes

Verify the manufacturer designation carefully, as the product line originated from Spansion and is now managed by Infineon Technologies. Confirm that the specific suffix matches the required voltage and temperature grades. Ensure compatibility with existing PCB footprints and signal integrity requirements for the 24-FBGA package before finalizing procurement orders.

Memory IC Selection Notes

Select this component when a parallel interface is required for direct code execution without external controller overhead. Compare against SPI-based alternatives if board space is limited, noting that parallel interfaces offer higher throughput. Verify that the system power supply can maintain stability within the 2.7 V to 3.6 V operating window during peak read cycles.

Memory IC Part Context

This device belongs to the HyperFlash family, which combines the ease of use of NOR flash with performance levels approaching SRAM. The technology is optimized for applications requiring frequent small-block writes and fast random reads. It serves as a drop-in replacement for traditional parallel NOR flash in legacy designs while offering improved endurance and speed characteristics.

Memory IC Replacement Considerations

Check for pin-compatible upgrades within the same HyperFlash family. Verify electrical parameter alignment, particularly voltage ranges and timing constraints, when substituting with newer revisions or equivalent parts from other manufacturers.