S26KL512SDABHV023

Memory IC Overview

The Infineon S26KL512SDABHV023 is a 512 Mbit (64 MB) HYPERFLASH™ NOR flash memory device featuring the HYPERBUS™ interface. It operates with a 1.8 V core and I/O voltage, utilizing a differential clock configuration. The device supports a maximum clock rate of 166 MHz, achieving up to 333 MBps sustained read throughput via DDR data transfers. Key specifications include a 96 ns initial random read access time, uniform 256 KB sector erase capability, and an embedded ECC engine for one-bit correction and two-bit detection. It is housed in a 24-ball FBGA package.

Memory IC Feature Summary

• Supports high-speed sequential burst transactions with configurable wrapped or linear burst lengths.
• Integrates embedded Error Correction Code (ECC) logic for automatic single-bit error correction during read operations.
• Includes hardware-accelerated Cyclic Redundancy Check (CRC) calculation capabilities over user-defined address ranges.
• Features advanced sector protection mechanisms supporting both volatile and non-volatile locking methods.

Memory IC Applications

• Automotive infotainment systems requiring high-speed code execution
• Industrial control units needing reliable non-volatile storage
• Embedded applications utilizing the HYPERBUS™ protocol for efficient pin-count interfaces

Memory IC Procurement Notes

Verify that the specific suffix 'V023' corresponds to the intended automotive grade and temperature range within the official ordering information table. Confirm the package height and ball finish requirements against the mechanical drawing. Ensure compatibility with the host controller's support for differential clocks and DCARS functionality before finalizing procurement.

Memory IC Selection Notes

Select this component when a 1.8 V supply domain is required alongside high-bandwidth read performance. The device is suitable for designs necessitating integrated data integrity features such as ECC and CRC without external processing overhead. Consider the 24-ball FBGA footprint constraints and the availability of differential clock routing on the PCB layout.

Memory IC Part Context

This part belongs to the S26KL/S26KS HYPERFLASH™ family, which provides CMOS NOR flash technology with a low-signal-count DDR interface. The family offers various densities and voltage options, including 3.0 V and 1.8 V variants, catering to diverse industrial and automotive memory requirements.

Memory IC Replacement Considerations

S26KL512SDABHI020: Identical density and interface but utilizes a 3.0 V I/O voltage level instead of 1.8 V.

Memory IC FAQ

How does the device handle data integrity errors?

The device includes an embedded Hamming ECC engine that automatically corrects single-bit errors and detects double-bit errors within each half-page during read operations.

What is the function of the PSC/PSC# pins?

PSC and PSC# are optional phase-shifted clock inputs used to enable the DDR Center Aligned Read Strobe (DCARS) feature, allowing independent skewing of the RWDS signal relative to the main clock.