S26KS128SDGBHM030

Memory IC Overview

The S26KS128SDGBHM030 is a 128 Mbit (16 MB) HYPERFLASH NOR flash memory device manufactured by Infineon Technologies. It utilizes the HYPERBUS interface with an 8-bit data bus and supports a maximum clock rate of 166 MHz at 1.8 V, achieving up to 333 MBps sustained read throughput. The device features a 96 ns initial random read access time and operates within a voltage range of 1.7 V to 1.95 V. It is housed in a 24-ball FBGA package and supports industrial plus temperature ranges from -40°C to +105°C.

Memory IC Feature Summary

• Supports high-speed DDR data transfers using the HYPERBUS protocol with differential clock inputs for improved signal integrity.
• Includes embedded Error Correction Code (ECC) logic capable of correcting single-bit errors and detecting two-bit errors within half-pages.
• Features a configurable write buffer that allows programming operations without requiring external command sequences during execution.
• Provides hardware-accelerated Cyclic Redundancy Check (CRC) calculation capabilities over user-defined address ranges.

Memory IC Applications

• Boot code storage in automotive infotainment systems
• Firmware storage for microcontrollers requiring fast random access
• Data logging applications in industrial control environments
• Code execution in-situ (XIP) for high-performance embedded processors

Memory IC Procurement Notes

Verify the specific ordering suffix against the manufacturer's current valid combinations list to ensure correct package height and temperature grade. Confirm that the required voltage domain matches the 1.8 V specification. Ensure design compatibility with the HYPERBUS protocol timing requirements before finalizing procurement orders.

Memory IC Selection Notes

Select this component when a low pin-count interface is required alongside high sequential read bandwidth. The 1.8 V I/O variant is suitable for modern low-voltage processors. Consider the integrated ECC feature if system-level error handling resources are limited. Verify that the 24-ball FBGA footprint fits the available PCB space constraints.

Memory IC Part Context

This part belongs to the S26KS family of HYPERFLASH memories, which are designed as drop-in replacements for traditional parallel NOR flash in many applications while offering higher performance. The family shares common command sets and architectural features across different densities, simplifying software migration strategies for designers upgrading existing systems.

Memory IC Replacement Considerations

Direct substitutes include other S26KS128 variants with matching voltage and temperature grades. Verify pin compatibility for CK# and PSC signals, as these may be reserved or unused on 3.0 V versions. Ensure the replacement maintains the same 24-ball FBGA footprint dimensions.