Memory IC S26KS512SDABHV030 product image

S26KS512SDABHV030

$10.64
  • Description:IC FLASH 512MBIT PAR 24FBGA
  • Series:HYPERFLASH™ KS
  • Mfr:Spansion
  • Package:Bulk

SKU:f0d9bc043ed1 Category: Brand:

  
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S26KS512SDABHV030 is listed in the Memory IC range at ChipApex. The manufacturer field lists Spansion. Its product description is IC FLASH 512MBIT PAR 24FBGA. Review the specifications below when checking this part for your BOM.

Memory IC specifications for S26KS512SDABHV030

  • Description:IC FLASH 512MBIT PAR 24FBGA
  • Series:HYPERFLASH™ KS
  • Mfr:Spansion
  • Package:Bulk
  • Memory Type:Non-Volatile
  • Memory Format:FLASH
  • Technology:FLASH - NOR
  • Memory Size:512Mbit
  • Memory Organization:64M x 8
  • Memory Interface:Parallel
  • Clock Frequency:100 MHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:1.7V ~ 1.95V
  • Operating Temperature:-40°C ~ 105°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:24-VBGA
  • Supplier Device Package:24-FBGA (6x8)
  • Access Time:96 ns
  • Grade:-
  • Qualification:-

Memory IC datasheet and documents for S26KS512SDABHV030

S26KS512SDABHV030

Memory IC Overview

The S26KS512SDABHV030 is a 512 Mbit (64 Mbyte) HyperFlash NOR memory device from the S26KL/S26KS family, manufactured by Spansion. It features an 8-bit data bus and supports synchronous operation with a maximum clock frequency of 133 MHz at 1.8V supply voltage. The component utilizes a 24-pin FBGA package with dimensions of 6x8 mm. It operates within a temperature range of -40°C to +105°C and complies with AEC-Q100 automotive qualification standards.

Memory IC Feature Summary

  • Supports high-speed parallel interface via HyperBus protocol for efficient data transfer.
  • Delivers sustained read throughput using Double-Data Rate (DDR) technology.
  • Provides low initial random read access time for rapid code execution.
  • Qualified for automotive applications under AEC-Q100 standards.

Memory IC Applications

  • Automotive infotainment systems requiring fast boot times.
  • Industrial control units needing reliable non-volatile storage.
  • Embedded systems executing code directly from flash memory.

Memory IC Procurement Notes

Verify the specific suffix HV against official Infineon/Spansion documentation to confirm pinout and electrical characteristics match your design requirements. Ensure compatibility with the host controller's HyperBus interface timing constraints. Confirm that the 24-FBGA package footprint aligns with your PCB layout specifications before finalizing procurement.

Memory IC Selection Notes

Select this component when high-speed code execution is critical for system performance. The 512 Mbit density offers sufficient space for complex firmware and data logging. Consider the 1.8V I/O requirement for power management integration. Verify thermal dissipation capabilities given the active read current specifications in your enclosure design.

Memory IC Part Context

This part belongs to the HYPERFLASH KS series, designed to bridge the gap between traditional NOR flash speed and NAND flash density. It replaces older parallel NOR solutions in applications demanding faster boot-up and runtime performance. The S26KS variant specifically targets 1.8V operation, distinguishing it from 3.0V counterparts in the same family.

Memory IC Replacement Considerations

Check for S26KL512SDABHV030 if 3.0V I/O is required instead of 1.8V. Verify cross-compatibility with other S26KS512 variants differing only in temperature grade or packaging revisions through official datasheet comparisons.

S26KS512SDABHV030S26KS512SDABHV030
$10.64
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