S27KL0642GABHI020

Memory IC Overview

The Infineon S27KL0642GABHI020 is a 64Mb HYPERRAM self-refresh DRAM (PSRAM) featuring a HYPERBUS interface. It supports 1.8V and 3.0V operation with a maximum clock rate of 200MHz, achieving data throughput up to 400MBps. The device utilizes a 24-ball FBGA package and operates within an industrial temperature range of -40°C to +85°C. Key electrical parameters include a maximum access time of 35ns and configurable burst characteristics for linear or wrapped sequences.

Memory IC Feature Summary

• Self-refresh DRAM array managed internally, eliminating host refresh requirements
• HYPERBUS interface supporting single-ended or optional differential clock modes
• Configurable burst lengths including linear and wrapped sequences
• Hybrid sleep and deep power-down modes for energy efficiency

Memory IC Applications

• Automotive telematics control units
• Industrial automation systems
• Machine vision applications
• Battery-operated consumer devices

Memory IC Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm voltage levels, package type, and temperature grade. Ensure compatibility with the host system's HYPERBUS controller signals and power supply rails before integration.

Memory IC Selection Notes

Select this component for applications requiring high bandwidth with low pin counts. Consider the 24-ball FBGA footprint for space-constrained designs. Verify that the host processor supports the required DDR timing and command/address protocols defined in the datasheet.

Memory IC Part Context

This part belongs to the Infineon S27KL0642 series of 64Mb HYPERRAM devices. It is designed as a pseudo-static RAM solution, combining DRAM density with SRAM ease of use. The series supports various interface voltages and operating temperatures to suit different industrial and automotive environments.

Memory IC Replacement Considerations

S27KL0642GABHI023