S27KS0642GABHB023

Memory IC Overview

The Infineon S27KS0642GABHB023 is a 64 Mbit HYPERRAM self-refresh DRAM (PSRAM) featuring a HYPERBUS interface. It supports 1.8 V and 3.0 V operation with a maximum clock rate of 200 MHz, achieving data throughput up to 400 MBps. The device utilizes a 24-ball FBGA package and operates within an automotive temperature range of -40°C to +105°C. Key electrical parameters include a maximum access time of 35 ns and configurable burst characteristics for linear or wrapped sequences.

Memory IC Feature Summary

• Self-refresh DRAM architecture eliminates the need for external refresh management by the host controller.
• HYPERBUS interface provides high-speed bidirectional data transfer using an 8-bit DDR bus with low pin count.
• Configurable burst modes support both linear and wrapped sequences for optimized data access patterns.
• Integrated power conservation features include Hybrid Sleep mode and Deep Power-Down states.

Memory IC Applications

• Automotive telematics control units requiring high bandwidth memory
• Industrial automation systems needing reliable data storage
• Machine vision applications processing image data streams

Memory IC Procurement Notes

Verify the specific ordering suffix against the manufacturer's current roadmap to confirm availability and lead times. Ensure the selected voltage variant matches the system design requirements. Confirm that the 24-ball FBGA footprint aligns with the PCB layout specifications before finalizing procurement orders.

Memory IC Selection Notes

Select this component when an application requires pseudo-static RAM behavior with high throughput and low pin count. The Automotive grade qualification makes it suitable for harsh environments. Consider the 1.8 V or 3.0 V supply options based on the host controller's I/O voltage levels and power constraints.

Memory IC Part Context

This part belongs to the KS-2 series of HYPERRAM devices from Infineon Technologies. It is designed as a drop-in replacement for standard SRAM in applications where density and speed are critical. The device integrates control logic to manage internal refresh cycles, simplifying the host interface design.

Memory IC Replacement Considerations

Public confirmed substitute part numbers: S27KS0642GABHA023, S27KS0642GABHV020.