S29CD016J0MQFI000

Memory IC Overview

The Infineon S29CD016J0MQFI000 is a 16 Mbit (512K x 32-bit) synchronous burst mode NOR flash memory. It operates on a single 2.5 V to 2.75 V supply and supports simultaneous read/write operations with zero latency across two independent banks. The device features a 40 MHz clock frequency, an initial access time of 54 ns, and VersatileI/O support ranging from 1.65 V to 3.6 V. It utilizes a 80-pin Plastic Quad Flat Package (PQFP) and is rated for industrial extended temperature operation.

Memory IC Feature Summary

• Simultaneous Read/Write: Enables concurrent read and write operations on separate banks without latency.
• Dual Boot Sector Configuration: Supports flexible boot sector placement at either the top or bottom of the memory map.
• Secured Silicon Region: Provides a one-time programmable area for factory or customer-locked security data.
• Versatile I/O Control: Allows flexible interface voltage levels between 1.65 V and 3.6 V.

Memory IC Applications

• Automotive engine control units requiring high reliability
• Industrial systems needing robust code storage
• Applications demanding simultaneous data execution and modification

Memory IC Procurement Notes

Verify the specific ordering suffix against official documentation to confirm package type, temperature range, and material set. Ensure compatibility with system voltage requirements and interface standards before integration. Confirm availability through authorized distributors as part numbers may have specific packing or autoselect ID variations.

Memory IC Selection Notes

Select this component for designs requiring a 32-bit wide interface with synchronous burst capabilities. It is suitable for applications needing dual-bank independence and advanced sector protection. Verify that the 2.5 V operating voltage aligns with the target system power rails and that the PQFP package fits the PCB layout constraints.

Memory IC Part Context

This device belongs to the S29CD-J series of automotive-grade burst mode flash memories. Manufactured using 110 nm floating gate technology, it offers high performance and endurance. The series is optimized for demanding environments, providing extensive protection features and flexible sector architectures for reliable data storage in critical systems.

Memory IC Replacement Considerations

Compatible substitutes within the same family include S29CD016J0MFAM variants for BGA packages or S29CL016J models if 3.3 V operation is required. Ensure pinout and electrical specifications match when considering cross-voltage or alternative package replacements.

Memory IC FAQ

Does the S29CD016J0MQFI000 support simultaneous read and write operations?

Yes, the device supports simultaneous read and write operations with zero latency on two separate banks using distinct data and address pins.

What is the supported voltage range for the Versatile I/O?

The Versatile I/O feature allows the input/output voltage to operate within a range of 1.65 V to 3.6 V.

How is the Secured Silicon Sector protected?

The Secured Silicon Sector can be locked by the factory or the customer using specific entry and exit commands, making it one-time programmable.