S29CD016J0PFAM010

Memory IC Overview

The S29CD016J0PFAM010 is a 16 Megabit (512K x 32-Bit) CMOS Burst Mode Flash memory device manufactured by Cypress Semiconductor. It utilizes 110-nm floating gate technology and operates on a single 2.6V supply voltage. The component features simultaneous read/write operations with zero latency across two separate banks using independent data and address pins. It supports a maximum clock frequency of 66 MHz, offering an asynchronous access time of 54 ns and synchronous burst access times of 8 ns. The device is housed in an 80-ball Fortified Ball Grid Array package measuring 13 x 11 mm with a 1.0 mm pitch.

Memory IC Feature Summary

• Simultaneous Read/Write operation with zero latency on two separate banks
• Dual Boot Sector Configuration supporting top or bottom boot options
• VersatileI/O control allowing VIO levels from 1.65V to 3.6V
• Secured Silicon Sector for factory or customer locking

Memory IC Applications

• Automotive designs requiring demanding performance
• Systems utilizing Common Flash Interface (CFI)
• Applications needing flexible sector architecture for code storage

Memory IC Procurement Notes

Verify the specific ordering suffix against the manufacturer's valid combinations table to ensure correct package type, temperature range, and boot sector configuration. Confirm that the 2.6V-only power requirement aligns with the system design, as this variant differs from the 3.3V-only CL-J series. Check for lead-free material set availability if required by environmental standards.

Memory IC Selection Notes

Select this component when a 32-bit data bus width and simultaneous read/write capability are required for high-throughput applications. Ensure the system can support the 2.6V operating voltage range. Consider the 110-nm process technology for its balance of density and endurance. Verify that the 80-pin BGA footprint fits the PCB layout constraints.

Memory IC Part Context

This part belongs to the S29CD-J family of 16 Mbit and 32 Mbit burst-mode Flash memories. These devices are optimized for automotive applications and feature 110-nm floating gate technology. The family includes variants with different voltage requirements (2.6V vs 3.3V) and package options, including PQFP and fortified BGA configurations.

Memory IC Replacement Considerations

The S29CL016J series serves as a functional equivalent but requires a 3.3V supply instead of 2.6V. Designers must verify voltage compatibility before substitution. Other members of the S29CD-J family may offer different densities or package sizes.