S29GL01GP11FFCR10

Memory IC Overview

The Infineon S29GL01GP11FFCR10 is a 1 Gbit NOR Flash memory device manufactured using 90 nm MirrorBit process technology. It features a 64-ball Fortified Ball Grid Array (FBGA) package and supports an asynchronous parallel interface with VersatileIO control, allowing VIO levels from 1.65 V to VCC. The device operates within a voltage range of 2.7 V to 3.6 V and offers a random access time of 110 ns with a page access time of 25 ns. It includes a 32-word write buffer for efficient programming and provides advanced sector protection mechanisms.

Memory IC Feature Summary

• Supports VersatileIO control for flexible I/O voltage levels ranging from 1.65 V to VCC
• Features a 32-word write buffer to accelerate multi-word programming operations
• Includes a Secured Silicon Sector region for permanent identification storage
• Provides Advanced Sector Protection using persistent and password methods

Memory IC Applications

• Embedded applications requiring high density and lower power consumption
• Systems needing fast page mode read access for code execution
• Applications requiring secure identification storage via the Secured Silicon Sector

Memory IC Procurement Notes

Verify the specific ordering suffix FF indicates the 64-ball FBGA package and lead-free material composition. Confirm that CR10 corresponds to the Commercial temperature range (0°C to +85°C) and the R1 model number configuration. Ensure compatibility with the required VIO voltage levels for your system design before procurement.

Memory IC Selection Notes

Select this component when a 1 Gbit capacity with 110 ns random access speed is required in a compact BGA footprint. The VersatileIO feature allows interfacing with 1.8 V or 3.0 V logic systems. Consider the commercial temperature range suitability for your operating environment and verify the need for the specific sector protection locking options provided by the R1 model configuration.

Memory IC Part Context

This part belongs to the S29GL-P family of 3V Page Flash memories. The family utilizes Cypress/Infineon's 90 nm MirrorBit technology to deliver high performance and endurance. The S29GL01GP variant specifically offers 1024 uniform 64 Kword sectors, providing granular erase capabilities suitable for complex firmware storage architectures.

Memory IC Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.