Memory IC S29GL01GT10GHI020 product image

S29GL01GT10GHI020

  • Description:IC FLASH 1GBIT PARALLEL 56FBGA
  • Series:GL-T
  • Mfr:Infineon Technologies
  • Package:Tray

SKU:5ae47acd1d0b Category: Brand:

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S29GL01GT10GHI020 is listed in the Memory IC range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is IC FLASH 1GBIT PARALLEL 56FBGA. Review the specifications below when checking this part for your BOM.

Memory IC specifications for S29GL01GT10GHI020

  • Description:IC FLASH 1GBIT PARALLEL 56FBGA
  • Series:GL-T
  • Mfr:Infineon Technologies
  • Package:Tray
  • Memory Type:Non-Volatile
  • Memory Format:FLASH
  • Technology:FLASH - NOR
  • Memory Size:1Gbit
  • Memory Organization:128M x 8
  • Memory Interface:Parallel
  • Clock Frequency:-
  • Write Cycle Time - Word, Page:60ns
  • Voltage - Supply:2.7V ~ 3.6V
  • Operating Temperature:-40°C ~ 85°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:56-VFBGA
  • Supplier Device Package:56-FBGA (9x7)
  • Access Time:100 ns
  • Grade:-
  • Qualification:-

Memory IC datasheet and documents for S29GL01GT10GHI020

S29GL01GT10GHI020

Memory IC Overview

The Infineon S29GL01GT10GHI020 is a 1 Gbit (128 MB) GL-T MirrorBit Eclipse parallel NOR flash memory. It features a 56-pin TSOP package and operates on a single 2.7 V to 3.6 V supply. The device supports asynchronous reads with a maximum random access time of 100 ns and a page access time of 15 ns. It includes a 512-byte write buffer for efficient programming, uniform 128-KB sector erase architecture, and an internal hardware ECC engine for single-bit error correction.

Memory IC Feature Summary

  • Supports versatile I/O voltage range from 1.65 V to VCC for flexible system integration
  • Integrates a 512-byte write buffer to accelerate effective programming throughput
  • Provides advanced sector protection with both volatile and non-volatile locking methods
  • Includes a separate 2048-byte one-time programmable array with lockable regions

Memory IC Applications

  • Embedded applications requiring execute-in-place (XIP) capabilities
  • Industrial systems demanding high-density non-volatile data storage
  • Automotive electronic control units requiring AEC-Q100 qualified components
  • Firmware storage in microprocessor-based embedded architectures

Memory IC Procurement Notes

Verify the specific ordering suffix against the official Infineon datasheet to confirm package type, temperature grade, and I/O voltage configuration. Ensure compatibility with host interface requirements regarding asynchronous timing and voltage levels before procurement.

Memory IC Selection Notes

Select this component for designs needing fast random access combined with high density. Consider the 56-pin TSOP form factor for space-constrained PCB layouts. Evaluate the need for automotive qualification if operating in harsh environments or safety-critical applications.

Memory IC Part Context

This part belongs to the GL-T family of 3.0 V core parallel NOR flashes fabricated on 45-nm technology. The series offers a balance of XIP performance and data storage speed, featuring robust sector protection and ECC capabilities suitable for modern embedded systems.

Memory IC Replacement Considerations

Consult the official datasheet for valid substitute part numbers within the S29GL01GT series that match the required package and temperature specifications.

S29GL01GT10GHI020S29GL01GT10GHI020

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