S29GL01GT11DHB020

$14.13

Description：IC FLASH 1GBIT PARALLEL 64FBGA
Series：GL-T
Mfr：Infineon Technologies
Package：Tray

SKU:a14206098d5f Category: Memory IC Brand: Infineon Technologies

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

S29GL01GT11DHB020 is listed in the Memory IC range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is IC FLASH 1GBIT PARALLEL 64FBGA. Review the specifications below when checking this part for your BOM.

Memory IC specifications for S29GL01GT11DHB020

Description：IC FLASH 1GBIT PARALLEL 64FBGA
Series：GL-T
Mfr：Infineon Technologies
Package：Tray
Memory Type：Non-Volatile
Memory Format：FLASH
Technology：FLASH - NOR
Memory Size：1Gbit
Memory Organization：128M x 8
Memory Interface：Parallel
Clock Frequency：-
Write Cycle Time - Word, Page：60ns
Voltage - Supply：2.7V ~ 3.6V
Operating Temperature：-40°C ~ 105°C (TA)
Mounting Type：Surface Mount
Package / Case：64-LBGA
Supplier Device Package：64-FBGA (9x9)
Access Time：110 ns
Grade：Automotive
Qualification：AEC-Q100

Memory IC datasheet and documents for S29GL01GT11DHB020

S29GL01GT11DHB020

Memory IC Overview

The Infineon S29GL01GT11DHB020 is a 1 Gbit (128 MB) GL-T MirrorBit Eclipse Flash memory device fabricated on 45-nm technology. It features a parallel interface with an asynchronous timing type and supports both x8 and x16 data bus widths. The device operates within a voltage range of 2.7 V to 3.6 V, with a maximum active read current of 60 mA. It offers a random access time of 110 ns and a page access time of 15 ns. The component is housed in a 64-ball LAE fortified BGA package measuring 9 mm x 9 mm and is designed for industrial temperature ranges.

Memory IC Feature Summary

Features a versatile I/O capability allowing the input/output voltage range to extend from 1.65 V up to the core supply voltage (VCC).
Includes an internal hardware automatic error checking and correction mechanism capable of single-bit error correction during initial access.
Provides advanced sector protection through both volatile and non-volatile methods to secure individual sectors against unauthorized programming or erasure.

Memory IC Applications

Embedded applications requiring high-density code storage and execute-in-place capabilities.
Industrial systems needing robust data retention and sector protection mechanisms.
Automotive electronic control units utilizing AEC-Q100 qualified components.

Memory IC Procurement Notes

Verify the specific ordering suffix to confirm the exact package dimensions, lead-free finish specifications, and intended operating temperature grade. Ensure compatibility with the host system's voltage levels and interface requirements before finalizing procurement decisions.

Memory IC Selection Notes

Select this component when a 1 Gbit density is required alongside fast page access speeds and versatile I/O flexibility. Consider the 64-ball BGA packaging for space-constrained designs and evaluate the need for advanced sector protection features inherent to the GL-T family architecture.

Memory IC Part Context

This part belongs to the GL-T family of MirrorBit Eclipse Flash memories, which combines execute-in-place performance with high-density data storage capabilities. The series utilizes 45-nm process technology to deliver improved performance and lower power consumption compared to previous generations.