S29GL064N90FFIS20

Memory IC Overview

The S29GL064N90FFIS20 is a 64-Mbit NOR Flash memory device manufactured using 110 nm MirrorBit process technology. It operates on a single 3.0-Volt power supply and supports parallel interface access with a maximum access time of 90 ns. The device is organized as 8M x 8 or 4M x 16 bits, configurable via the BYTE# pin. It features flexible sector architecture, including uniform and boot sector options, and includes a Secured Silicon Sector for permanent identification. The component is housed in a 64-ball Fortified Ball-Grid Array (BGA) package.

Memory IC Feature Summary

• Manufactured on 110 nm MirrorBit process technology for high reliability and cost effectiveness.
• Features Enhanced Versatile I/O Control allowing VIO range from 1.65V to VCC.
• Includes Advanced Sector Protection with Persistent and Password protection methods.
• Supports Program and Erase Suspend/Resume operations for non-intrusive system access.

Memory IC Applications

• Code storage in embedded systems requiring fast random access.
• Boot code storage for microprocessors and microcontrollers.
• Data storage in industrial and automotive applications.
• Firmware storage in consumer electronics devices.

Memory IC Procurement Notes

Verify the specific ordering suffix against the manufacturer's current product selector guide to confirm package type, temperature range, and sector configuration. Confirm RoHS compliance status and lead-free availability as manufacturing processes evolve. Check for any discontinuance notifications or end-of-life statuses prior to final design approval.

Memory IC Selection Notes

Select this component when a 64-Mbit capacity with 90 ns access speed is required in a compact BGA footprint. Ensure the system voltage supports the 2.7V to 3.6V operating range. Consider the specific sector layout (uniform vs. boot) and I/O width requirements (8-bit vs. 16-bit) defined by the model number suffix during initial design planning.

Memory IC Part Context

This part belongs to the S29GL-N family of 3.0-Volt Page Mode MirrorBit Flash memories originally developed by Cypress Semiconductor Corporation. Following the acquisition by Infineon Technologies, the product portfolio continues under the Infineon brand while maintaining original specifications and ordering numbers. The S29GL064N variant specifically provides 64 Megabit density.

Memory IC Replacement Considerations

Direct replacements within the same family include other S29GL064N variants with different packages or speeds, such as S29GL064N90TFI or S29GL064N90BFI, provided the pinout and electrical characteristics match the design requirements. Cross-family replacements require careful verification of voltage levels and interface compatibility.