Memory IC S29GL064S90BHI030 product image

S29GL064S90BHI030

  • Description:IC FLASH 64MBIT PARALLEL 48FBGA
  • Series:GL-S
  • Mfr:Infineon Technologies
  • Package:Tray

SKU:0b8fbed1e34e Category: Brand:

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S29GL064S90BHI030 is listed in the Memory IC range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is IC FLASH 64MBIT PARALLEL 48FBGA. Review the specifications below when checking this part for your BOM.

Memory IC specifications for S29GL064S90BHI030

  • Description:IC FLASH 64MBIT PARALLEL 48FBGA
  • Series:GL-S
  • Mfr:Infineon Technologies
  • Package:Tray
  • Memory Type:Non-Volatile
  • Memory Format:FLASH
  • Technology:FLASH - NOR
  • Memory Size:64Mbit
  • Memory Organization:8M x 8, 4M x 16
  • Memory Interface:Parallel
  • Clock Frequency:-
  • Write Cycle Time - Word, Page:60ns
  • Voltage - Supply:2.7V ~ 3.6V
  • Operating Temperature:-40°C ~ 85°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:48-VFBGA
  • Supplier Device Package:48-FBGA (8.15x6.15)
  • Access Time:90 ns
  • Grade:Automotive
  • Qualification:AEC-Q100

Memory IC datasheet and documents for S29GL064S90BHI030

S29GL064S90BHI030

Memory IC Overview

The S29GL064S90BHI030 is a 64-Mbit (8 MByte) parallel NOR flash memory from the GL-S family, manufactured using 65-nm MIRRORBIT™ technology. It operates on a single 3.0 V power supply with a VCC range of 2.7 V to 3.6 V and supports a VIO range of 1.65 V to 3.6 V. The device features a maximum access time of 90 ns and a page access time of 25 ns. It is housed in a 64-ball fortified BGA package (LAE064, 9 mm × 9 mm × 1.4 mm) with Sn/Ag/Cu lead ball surface finish. The component is rated for an industrial temperature range of -40°C to +85°C.

Memory IC Feature Summary

  • Utilizes 65-nm MIRRORBIT™ process technology for high reliability and cost effectiveness.
  • Features flexible sector architecture with persistent and password-based sector protection mechanisms.
  • Includes automatic error checking and correction (ECC) with internal hardware support for single-bit error correction.
  • Supports program and erase suspend/resume operations to allow reading or programming other sectors during active cycles.

Memory IC Applications

  • Industrial control systems requiring robust non-volatile storage
  • Automotive electronics compliant with AEC-Q100 standards
  • Consumer devices needing secure silicon region identification

Memory IC Procurement Notes

Verify the specific speed grade and voltage compatibility against the product selector guide before procurement. Confirm that the system design accommodates the 64-ball fortified BGA footprint dimensions. Ensure the host interface supports the required parallel command sequences and voltage levels for VCC and VIO. Check for any specific factory locking configurations if secure silicon region usage is planned.

Memory IC Selection Notes

Select this model when a 90 ns access time is sufficient for the application within the industrial temperature range. Consider the LAE064 package size constraints relative to the PCB layout. Evaluate the need for the specific VIO voltage range support if interfacing with lower voltage logic. Verify that the sector protection requirements align with the available persistent and password protection features.

Memory IC Part Context

This component belongs to the S29GL-S mid-density flash memory family, which offers versatile I/O options and JEDEC standard compatibility. The GL-S series is designed for applications demanding high performance and low power consumption, featuring advanced write buffer capabilities and multiple package options including TSOP and various BGA formats.

Memory IC Replacement Considerations

Consult official migration application notes for transitions from older S29PL or S29AL series devices. Verify pinout and software compatibility when replacing similar density parts within the GL-N or GL-S families. Ensure thermal and electrical specifications match the original design requirements.

S29GL064S90BHI030S29GL064S90BHI030

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