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S29GL128N11TFVR10 is listed in the Memory IC range at ChipApex. The manufacturer field lists Spansion. Its product description is IC FLASH 128MBIT PARALLEL 56TSOP. Review the specifications below when checking this part for your BOM.
Memory IC specifications for S29GL128N11TFVR10
- Description：IC FLASH 128MBIT PARALLEL 56TSOP
- Series：GL-N
- Mfr：Spansion
- Package：Bulk
- Memory Type：Non-Volatile
- Memory Format：FLASH
- Technology：FLASH - NOR
- Memory Size：128Mbit
- Memory Organization：16M x 8, 8M x 16
- Memory Interface：Parallel
- Clock Frequency：-
- Write Cycle Time - Word, Page：110ns
- Voltage - Supply：3V ~ 3.6V
- Operating Temperature：-40°C ~ 105°C (TA)
- Mounting Type：Surface Mount
- Package / Case：56-TFSOP (0.724", 18.40mm Width)
- Supplier Device Package：56-TSOP
- Access Time：110 ns
- Grade：-
- Qualification：-
Memory IC datasheet and documents for S29GL128N11TFVR10
Memory IC Overview
The S29GL128N11TFVR10 is a 128 Megabit (16 M x 8) NOR Flash memory component from the Spansion S29GL-N MirrorBit family. It utilizes 110 nm MirrorBit process technology and operates on a single 3.0 Volt supply for read, erase, and program functions. The device features an asynchronous interface with a maximum access time of 110 ns. It is housed in a 56-pin TSOP package.
Memory IC Feature Summary
- Supports uniform sector erasure with 128-kbyte sectors for flexible data management.
- Includes a Write Buffer to enable faster effective programming times compared to standard algorithms.
- Features Versatile I/O control allowing wide input/output voltage ranges.
Memory IC Applications
- Embedded applications requiring high density and lower power consumption
- Code storage in industrial systems
- Data storage in automotive electronics
Memory IC Procurement Notes
Verify the specific suffix 'R10' against official manufacturer documentation to confirm tape-and-reel packaging status and lead-free compliance. Ensure the pinout matches the 56-pin TSOP specification. Cross-reference the exact part number with Infineon or Spansion databases as corporate structures have changed.
Memory IC Selection Notes
Select this component when a 128 Megabit capacity with 110 ns access speed is required. It is suitable for designs needing a single 3V supply and Versatile I/O compatibility. Consider the 110 nm process technology for its balance of performance and power efficiency in embedded environments.
Memory IC Part Context
This part belongs to the S29GL-N MirrorBit Flash Family, which includes 512 Megabit, 256 Megabit, and 128 Megabit variants. These devices are fabricated using 110 nm MirrorBit process technology and are designed for page mode operations with a 3.0 Volt-only core supply.
Memory IC Replacement Considerations
Compatible substitutes within the same family include S29GL128N90TFI01 (90 ns access) and S29GL128N10FAIV10. Verify package compatibility and timing requirements before substitution.
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