S29GL128P11FAIV20

Memory IC Overview

The S29GL128P11FAIV20 is a 128 Mbit Parallel NOR Flash memory device manufactured using 90 nm MirrorBit process technology. It features a 64-ball Fortified Ball Grid Array (FBGA) package and supports an industrial operating temperature range of -40°C to +85°C. The device operates on a single 3V supply with a voltage range of 2.7 V to 3.6 V. It offers Versatile I/O control, allowing input/output levels to be determined by the VIO pin, which ranges from 1.65 V to VCC. Key performance metrics include a maximum random access time of 110 ns and a page access time of 25 ns.

Memory IC Feature Summary

• Features a 32-word write buffer that reduces overall programming time for multiple-word updates compared to standard algorithms.
• Includes a Secured Silicon Sector region providing 128 words of permanent, secure identification storage via an Electronic Serial Number.
• Supports Program Suspend/Resume and Erase Suspend/Resume commands to allow immediate data read access during non-array operations.

Memory IC Applications

• Embedded applications requiring high density and lower power consumption
• Systems utilizing Versatile I/O for mixed-voltage signal interfacing
• Industrial designs demanding uniform sector architecture and advanced protection

Memory IC Procurement Notes

Verify the specific ordering suffix 'FAIV20' against official Infineon/Cypress documentation to confirm the exact package type, speed grade, and VIO configuration. Ensure compatibility with system voltage requirements and thermal specifications before procurement. Confirm availability status as product lifecycles may change.

Memory IC Selection Notes

Select this component for designs requiring fast page mode reads and efficient multi-word programming. The FBGA package is suitable for space-constrained layouts. Verify that the host system can support the required VIO voltage range and that the 110 ns access time meets the system timing constraints.

Memory IC Part Context

This part belongs to the S29GL-P family of 3.0 Volt-only Page-Mode Flash memories. The GL-P series is distinguished by its use of 90 nm MirrorBit technology, offering high endurance and data retention. It complements other densities in the GL-S and GL-T families, providing options for various storage needs within embedded systems.

Memory IC Replacement Considerations

S29GL128P11FFIV20