S29GL128P11TFI013

Memory IC Overview

The Infineon S29GL128P11TFI013 is a 128 Mbit NOR Flash memory device manufactured using 90 nm MirrorBit process technology. It features a parallel interface with an asynchronous timing type and supports a data bus width of 8 bits in byte mode or 16 bits in word mode, organized as 16M x 8 or 16M x 16. The device operates within a voltage range of 2.7 V to 3.6 V for VCC and 1.65 V to VCC for VIO. It offers a maximum active read current of 60 mA and provides a random access time (tACC) of 110 ns and a page access time (tPACC) of 25 ns under VersatileIO conditions. The component is housed in a 56-pin TSOP package and supports an industrial operating temperature range from -40°C to +85°C.

Memory IC Feature Summary

• Features VersatileIO control allowing I/O signal levels to operate from 1.65 V to VCC.
• Includes a 32-word write buffer to reduce overall programming time for multiple-word updates.
• Provides a Secured Silicon Sector region for permanent identification via an Electronic Serial Number.
• Supports program and erase suspend/resume operations for efficient system multitasking.

Memory IC Applications

• Embedded applications requiring high density and lower power consumption
• Systems utilizing Common Flash Interface (CFI) standards
• FPGA configuration storage

Memory IC Procurement Notes

Verify the specific ordering suffix to confirm the package type, speed grade, and temperature range match the design requirements. Ensure the VIO configuration aligns with the host system's logic levels. Confirm RoHS compliance status and moisture sensitivity level before assembly. Check for any end-of-life notifications or discontinuation notices associated with this specific part number variant.

Memory IC Selection Notes

Select this component when a 128 Mbit capacity with 110 ns random access time is required. The 56-pin TSOP package is suitable for surface-mount applications. Consider the VersatileIO feature if the system requires flexible I/O voltage levels between 1.65 V and 3.6 V. Ensure the application can accommodate the uniform 64 Kword sector architecture for erasure operations.

Memory IC Part Context

This device belongs to the S29GL-P family of 3V Page Flash memories. It is fabricated on Cypress/Infineon's 90 nm MirrorBit process technology. The family includes densities ranging from 128 Mbit to 1 Gbit. The S29GL128P11TFI013 specifically denotes the 128 Mbit density, 110 ns speed option, TSOP package, Industrial temperature range, and lead-free packing.

Memory IC Replacement Considerations

S29GL128P11TFIV13