S29GL128P11TFIV10

Memory IC Overview

The S29GL128P11TFIV10 is a 128 Mbit NOR Flash memory device from the GL-P family, manufactured using 90 nm MirrorBit process technology. It features a parallel interface with an asynchronous random access time of 110 ns and a page access time of 25 ns. The device operates on a single 3 V supply (2.7 V to 3.6 V) and supports VersatileIO control for I/O voltages ranging from 1.65 V to VCC. It utilizes a 56-pin TSOP package and includes a 32-word write buffer to accelerate programming operations.

Memory IC Feature Summary

• Features a 32-word write buffer that reduces overall programming time for multiple-word updates compared to standard algorithms.
• Supports VersatileIO control, allowing input and output voltage levels to be determined by the VIO pin ranging from 1.65 V to VCC.
• Includes a Secured Silicon Sector region capable of storing permanent identification data through an Electronic Serial Number.
• Provides hardware reset functionality via the RESET# input and status indication via the Ready/Busy# output.

Memory IC Applications

• Embedded applications requiring high density and lower power consumption
• Systems utilizing Common Flash Interface (CFI) standards
• FPGA configuration storage
• Code execution in place (XIP) applications

Memory IC Procurement Notes

Verify the specific ordering suffix against official documentation to confirm package type, temperature range, and protection settings. Confirm current manufacturing status as some GL-P variants may be discontinued. Ensure compatibility with system voltage requirements regarding the VersatileIO specification before procurement.

Memory IC Selection Notes

Select this component when a 128 Mbit capacity with 110 ns random access speed is required. The 56-pin TSOP package suits space-constrained designs. Consider the VersatileIO feature if interfacing with 1.8 V or 3 V logic systems while maintaining a 3 V core supply. Verify sector protection needs against the available hardware and software methods.

Memory IC Part Context

This part belongs to the S29GL-P series of 3 V Page Flash memories. The 'P' designation indicates the GL-P family architecture, distinct from the GL-S series. It shares the 90 nm MirrorBit process technology with other densities in the lineup, offering uniform 64 Kword sector architecture for consistent erase operations across the memory array.

Memory IC Replacement Considerations

S29GL128P10TFIV10: Offers 100 ns access time instead of 110 ns. S29GL128P12TFIV10: Offers 120 ns access time. S29GL128S11TFIV10: Belongs to the GL-S family; verify pinout and command set compatibility.