S29GL128S10FAIV10

Memory IC Overview

The S29GL128S10FAIV10 is a 128 Mbit NOR flash memory manufactured using the 65 nm MirrorBit Eclipse process. It features a parallel interface with an asynchronous timing type and a 16-bit data bus width, organized as 8 M x 16. The device operates within a voltage range of 2.7 V to 3.6 V for both VCC and VIO, consuming a maximum active read current of 60 mA. It provides a random access time of 100 ns and supports an industrial operating temperature range from -40°C to +85°C. The component is housed in a 64-ball Fortified Ball-Grid Array (FBGA) package.

Memory IC Feature Summary

• Utilizes 65 nm MirrorBit Eclipse process technology for high-density storage
• Supports page mode operations via a standard parallel interface
• Features sector protection capabilities with highest address sector protection enabled by default

Memory IC Applications

• Hardware system design requiring non-volatile code storage
• Software development environments needing direct execution memory
• Operating systems tools utilizing parallel NOR architecture

Memory IC Procurement Notes

Verify that the specific ordering suffix matches the required voltage configuration and sector protection settings. Confirm the package type corresponds to the LAA064 footprint. Ensure compatibility with the host system's parallel interface requirements before procurement.

Memory IC Selection Notes

Select this part when a 128 Mbit capacity with a 16-bit bus width is required. The 100 ns speed option suits applications where moderate access times are acceptable. Verify that the FBGA-64 package fits the PCB layout constraints and that the industrial temperature range meets environmental specifications.

Memory IC Part Context

This component belongs to the S29GL128S series within the broader S29GL-S family. It shares core architectural similarities with other capacities like the S29GL256S and S29GL512S, differing primarily in density and specific speed grades. The 'V1' suffix indicates a specific voltage configuration where VIO ranges from 1.65 V to VCC.

Memory IC Replacement Considerations

Check for valid combinations listed in the manufacturer's supplement. Other parts in the S29GL128S series may offer different speeds or packages but must match the electrical and pinout requirements.