Memory IC S29GL256N11FFA013 product image

S29GL256N11FFA013

$11.14
  • Description:IC FLASH 256MBIT PARALLEL 64FBGA
  • Series:GL-N
  • Mfr:Spansion
  • Package:Bulk

SKU:f32a98bd4801 Category: Brand:

  
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S29GL256N11FFA013 is listed in the Memory IC range at ChipApex. The manufacturer field lists Spansion. Its product description is IC FLASH 256MBIT PARALLEL 64FBGA. Review the specifications below when checking this part for your BOM.

Memory IC specifications for S29GL256N11FFA013

  • Description:IC FLASH 256MBIT PARALLEL 64FBGA
  • Series:GL-N
  • Mfr:Spansion
  • Package:Bulk
  • Memory Type:Non-Volatile
  • Memory Format:FLASH
  • Technology:FLASH - NOR
  • Memory Size:256Mbit
  • Memory Organization:32M x 8, 16M x 16
  • Memory Interface:Parallel
  • Clock Frequency:-
  • Write Cycle Time - Word, Page:110ns
  • Voltage - Supply:2.7V ~ 3.6V
  • Operating Temperature:-40°C ~ 85°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:64-LBGA
  • Supplier Device Package:64-FBGA (13x11)
  • Access Time:110 ns
  • Grade:Automotive
  • Qualification:AEC-Q100

Memory IC datasheet and documents for S29GL256N11FFA013

S29GL256N11FFA013

Memory IC Overview

The S29GL256N11FFA013 is a 256 Megabit (32 Megabyte) NOR Flash memory component from the Spansion GL-N MirrorBit family. It utilizes a 110 nm process technology and operates on a 3.0 Volt core voltage. The device features a parallel interface with an access time of 110 ns. It is housed in a 64-pin Lead-Free Fine-Pitch Ball Grid Array (FBGA) package measuring 13 mm by 11 mm with a 1 mm pitch. The memory supports symmetric block organization and offers versatile I/O capabilities.

Memory IC Feature Summary

  • Features 110 nm MirrorBit process technology for high-density storage
  • Supports page mode operations for efficient data transfer
  • Includes command user interface and data polling functions
  • Provides versatile I/O options compatible with standard interfaces

Memory IC Applications

  • Firmware storage in embedded systems
  • Code execution in XIP applications
  • Data storage in industrial control units
  • Software repositories in telecommunications equipment

Memory IC Procurement Notes

Verify that the specific suffix A013 corresponds to the required lead-free status and package variant, as ordering codes define physical attributes. Confirm RoHS compliance requirements against the specific manufacturing date code. Ensure the 110 nm generation is acceptable for the target design lifecycle, noting that newer P-family generations may supersede this N-family part.

Memory IC Selection Notes

Select this component when a 256 Mbit capacity with 110 ns access speed is required in a compact FBGA footprint. The 3.0 V core voltage makes it suitable for low-power designs. Engineers should evaluate the 110 nm process maturity versus newer 90 nm alternatives like the S29GL-P series if higher performance or extended availability is needed for new productions.

Memory IC Part Context

This part belongs to the S29GL-N MirrorBit Flash Family, which also includes the S29GL512N and S29GL128S variants. These devices share the 110 nm MirrorBit process technology and 3.0 Volt-only operation. The family is designed for applications requiring reliable non-volatile storage with flexible block structures and robust protection mechanisms.

Memory IC Replacement Considerations

The S29GL-P family, specifically the S29GL256P, is the factory-recommended migration path for the S29GL-N series. The P-series utilizes a 90 nm process and offers improved performance characteristics while maintaining pin compatibility in many configurations.

S29GL256N11FFA013S29GL256N11FFA013
$11.14
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