Memory IC S29GL256N90TFIR23 product image

S29GL256N90TFIR23

  • Description:IC FLASH 256MBIT PARALLEL 56TSOP
  • Series:GL-N
  • Mfr:Infineon Technologies
  • Package:Tray

SKU:66bb6b810ffc Category: Brand:

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S29GL256N90TFIR23 is listed in the Memory IC range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is IC FLASH 256MBIT PARALLEL 56TSOP. Review the specifications below when checking this part for your BOM.

Memory IC specifications for S29GL256N90TFIR23

  • Description:IC FLASH 256MBIT PARALLEL 56TSOP
  • Series:GL-N
  • Mfr:Infineon Technologies
  • Package:Tray
  • Memory Type:Non-Volatile
  • Memory Format:FLASH
  • Technology:FLASH - NOR
  • Memory Size:256Mbit
  • Memory Organization:32M x 8, 16M x 16
  • Memory Interface:Parallel
  • Clock Frequency:-
  • Write Cycle Time - Word, Page:90ns
  • Voltage - Supply:3V ~ 3.6V
  • Operating Temperature:-40°C ~ 85°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:56-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package:56-TSOP
  • Access Time:90 ns
  • Grade:-
  • Qualification:-

Memory IC datasheet and documents for S29GL256N90TFIR23

S29GL256N90TFIR23

Memory IC Overview

The S29GL256N90TFIR23 is a 256 Mbit Parallel NOR Flash memory device from the GL-N family, manufactured by Infineon Technologies. It features a 16 M x 16 organization with a 16-bit data bus width and an asynchronous interface. The component operates within a voltage range of 2.7 V to 3.6 V and supports an initial access time of 90 ns. It is housed in a 56-pin TSOP package and is qualified for automotive applications under AEC-Q100 standards. The device supports an operating temperature range from -40°C to +85°C.

Memory IC Feature Summary

  • Utilizes 110 nm MirrorBit process technology for high performance and reliability.
  • Features flexible sector architecture supporting uniform or boot sector configurations.
  • Includes a secured silicon region for permanent identification via electronic serial number.
  • Supports Versatile I/O (VIO) allowing input/output levels determined by the VIO pin voltage.

Memory IC Applications

  • Automotive embedded systems requiring AEC-Q100 qualification.
  • Industrial control applications needing robust non-volatile storage.
  • Code execution in place (XIP) environments.

Memory IC Procurement Notes

Verify the specific suffix 'R23' against official Infineon documentation to confirm reel packaging specifications and moisture sensitivity level. Ensure compatibility with existing board designs regarding the 56-TSOP footprint and electrical parameters before procurement.

Memory IC Selection Notes

Select this part for designs requiring 256 Mbit capacity with parallel interface and automotive grade reliability. Compare with GL-S or GL-P families if lower access times or simultaneous read/write capabilities are required. Confirm voltage tolerance matches the system's 3V supply rails.

Memory IC Part Context

This component belongs to the S29GL256N series within the broader GL-N MirrorBit Flash family. It serves as a non-volatile memory solution offering high endurance and data retention. The GL-N family is distinct from the GL-S and GL-P families primarily through its specific process node and feature set tailored for high-volume industrial and automotive markets.

Memory IC Replacement Considerations

Official migration paths suggest replacing retired N-series parts with P-series equivalents such as S29GL256P. Verify pinout and software compatibility when transitioning to newer generations.

S29GL256N90TFIR23S29GL256N90TFIR23

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