S29GL256P11TFIV10

Memory IC Overview

The S29GL256P11TFIV10 is a 256 Mbit Parallel NOR Flash manufactured by Infineon Technologies using 90 nm MirrorBit process technology. It features a 56-pin TSOP package and supports an asynchronous parallel interface with Versatile I/O (VIO) control, allowing VIO to range from 1.65 V to VCC while VCC operates between 2.7 V and 3.6 V. The device provides a random access time of 110 ns and a page access time of 25 ns. It includes a 32-word write buffer for efficient programming and offers uniform 64 Kword sector architecture.

Memory IC Feature Summary

• Supports Versatile I/O (VIO) control for flexible voltage levels on address, control, and data signals.
• Features a 32-word/64-byte write buffer to reduce overall programming time for multiple-word updates.
• Includes a Secured Silicon Sector region for permanent identification via an Electronic Serial Number.
• Provides Advanced Sector Protection methods including persistent and password protection.

Memory IC Applications

• Embedded applications requiring high density and lower power consumption
• Systems needing Execute in Place (XIP) capabilities
• Industrial environments operating within the specified temperature range

Memory IC Procurement Notes

Verify that the ordering suffix matches the required VIO range and sector protection configuration. Confirm the package type is 56-pin TSOP and the speed option corresponds to 110 ns access time. Ensure the temperature grade is Industrial (-40°C to +85°C). Check for lead-free status if RoHS compliance is mandatory for the assembly process.

Memory IC Selection Notes

Select this component when a 256 Mbit capacity with 110 ns random access is required. The V1 suffix indicates support for VIO levels as low as 1.65 V, suitable for mixed-voltage systems. The TFIV combination specifies the 56-pin TSOP package, Industrial temperature range, and specific VIO/protection settings. Consider the 32-word write buffer for improved programming throughput compared to standard algorithms.

Memory IC Part Context

This part belongs to the S29GL-P family of 3.0 Volt Page Flash memories. The GL-P series utilizes 90 nm MirrorBit technology and is designed for embedded designs demanding large storage arrays. It shares architectural similarities with other densities in the family, such as the S29GL128P and S29GL512P, differing primarily in memory size and sector count.

Memory IC Replacement Considerations

S29GL256P10TFIV10: Offers 100 ns access time instead of 110 ns.

Memory IC FAQ

What is the function of the WP#/ACC pin?

The WP#/ACC pin serves dual purposes. When held at VIL, it disables program and erase functions in the outermost sectors for hardware protection. When driven to VHH, it accelerates programming time by automatically placing the device in unlock bypass mode.

How does the Secured Silicon Sector work?

The Secured Silicon Sector consists of 128 words/256 bytes that are One Time Programmable. It can store customer or factory-secured information, such as an Electronic Serial Number, and can be programmed and locked either at the factory or by the customer.