S29GL256S10DHV023

Memory IC Overview

The Infineon S29GL256S10DHV023 is a 256 Mbit (32 Mbyte) parallel NOR flash memory device from the GL-S family, fabricated on 65-nm MIRRORBIT Eclipse technology. It features a 16-bit data bus and operates with a single 3.0 V supply voltage ranging from 2.7 V to 3.6 V. The device provides an asynchronous random access time of 100 ns and a page access time of 15 ns. It includes a 512-byte write buffer for efficient programming and supports uniform 128-kbyte sector erasure. The component is housed in a 64-ball VBU Fortified BGA package.

Memory IC Feature Summary

• Supports Versatile I/O allowing wide input/output voltage range from 1.65 V to VCC
• Integrates internal hardware ECC for single bit error correction during read operations
• Features Advanced Sector Protection with both volatile and non-volatile protection methods
• Includes a separate 1024-byte one-time programmable array with lockable regions

Memory IC Applications

• Embedded applications requiring high density and fast performance
• Systems utilizing Execute-In-Place (XIP) capabilities
• Industrial grade storage solutions operating between -40°C and +85°C

Memory IC Procurement Notes

Verify the specific ordering suffix DHV023 against official Infineon documentation to confirm the exact package type, temperature grade, and tape/reel specifications. Ensure compatibility with the host system's voltage levels, particularly regarding the Versatile I/O feature which allows I/O voltages as low as 1.65 V. Confirm that the 64-ball VBU Fortified BGA footprint matches the PCB design requirements.

Memory IC Selection Notes

Select this component when a 256 Mbit capacity with 100 ns random access speed is required in a compact BGA package. It is suitable for designs needing robust data integrity through hardware ECC and flexible sector protection schemes. Consider the industrial temperature range and the single-supply operation if power management constraints exist. Verify that the host controller supports the parallel interface and command set defined in the datasheet.

Memory IC Part Context

This part belongs to the S29GL256S series within the broader GL-S family of 3.0 V MIRRORBIT flash memories. The family shares common architectural features such as the embedded algorithm controller and command set, but varies in density, access speeds, and packaging options. The '10' designation indicates the 100 ns access speed variant.

Memory IC Replacement Considerations

Consult official Infineon cross-reference guides or datasheets for verified substitute part numbers. Do not assume functional equivalence with other densities or families without explicit manufacturer confirmation.