S29GL256S11DHV020

Memory IC Overview

The S29GL256S11DHV020 is a 256-Mbit (32M x 8 or 16M x 16) NOR flash memory from the GL-S family, fabricated on 65-nm MIRRORBIT Eclipse technology. It features a 16-bit data bus and supports asynchronous page reads with access times as fast as 15 ns for subsequent accesses within a page. The device operates on a single 2.7 V to 3.6 V supply with versatile I/O ranging from 1.65 V to VCC. Key specifications include a 512-byte write buffer, uniform 128-kbyte sector erase architecture, and internal hardware ECC for single-bit error correction.

Memory IC Feature Summary

• Features a 512-byte write buffer enabling faster effective programming by allowing up to 256 words to be programmed in one operation.
• Includes advanced sector protection (ASP) providing both volatile and non-volatile methods to protect individual sectors from program and erase operations.
• Integrates automatic error checking and correction (ECC) using internal hardware to correct single-bit errors during initial read access.
• Supports suspend and resume commands for program and erase operations, allowing host system interruption without data loss.

Memory IC Applications

• Embedded applications requiring high density and lower power consumption
• Systems utilizing Execute-In-Place (XIP) capabilities
• Data storage requiring robust sector protection and error correction

Memory IC Procurement Notes

Verify the specific suffix 'HV' against official Infineon documentation to confirm package type and temperature grade. Ensure compatibility with the Versatile I/O voltage range if the system uses logic levels below VCC. Confirm that the required access time meets the design constraints for the target application frequency.

Memory IC Selection Notes

Select this component when a 256-Mbit capacity with a 16-bit interface is required. Consider the GL-S family for its combination of XIP speed and data storage density. Evaluate the need for the 512-byte write buffer to optimize programming throughput. Verify that the operating temperature range aligns with the industrial or automotive grade requirements of the final product.

Memory IC Part Context

This part belongs to the S29GL-S MIRRORBIT Eclipse family, which includes densities from 128 Mb to 1 Gb. These devices are designed for embedded systems needing fast random access and high endurance. The GL-S series utilizes 65-nm process technology to achieve better performance and lower power consumption compared to previous generations.

Memory IC Replacement Considerations

Check for other members of the S29GL-S family with different densities or interfaces if pin count or capacity needs change. Verify cross-compatibility with other vendors' 256-Mbit parallel NOR flashes, ensuring command set and timing parameters match the existing design.

Memory IC FAQ

What is the maximum number of words that can be programmed in a single operation?

A maximum of 256 words (512 bytes) can be programmed in one operation using the write buffer.

How does the device handle error correction?

The device includes internal hardware ECC that automatically corrects single-bit errors during the initial access of every array read operation.

What is the sector size for erase operations?

The device features a uniform sector architecture with a sector size of 128 kbytes.