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S29GL512T11FHIV13 is listed in the Memory IC range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is IC FLASH 512MBIT PARALLEL 64FBGA. Review the specifications below when checking this part for your BOM.
The Infineon S29GL512T11FHIV13 is a 512 Mbit Parallel NOR Flash memory device from the GL-T MirrorBit Eclipse Flash family. It utilizes 45-nm process technology and supports an asynchronous interface with Versatile I/O capabilities, allowing VIO to range from 1.65 V to VCC. The device features a 512-byte write buffer for efficient programming and provides uniform 128-KB sector erase architecture. It operates within a voltage range of 2.7 V to 3.6 V and includes hardware ECC for single-bit error correction.
Verify the specific ordering suffix against the official Infineon datasheet to confirm package type, temperature grade, and I/O voltage specifications. Ensure compatibility with the target system's voltage levels and interface requirements before procurement.
Select this component for designs requiring 512 Mbit capacity with parallel interface support. Consider the Versatile I/O feature if the system requires logic levels below the core supply voltage. Evaluate the need for hardware ECC and sector protection features based on application reliability requirements.
This part belongs to the S29GL512T series, which offers 512 Mbit density using 45-nm MirrorBit technology. The GL-T family combines XIP performance with data storage density, featuring asynchronous read access and embedded algorithm controllers for program and erase operations.
Consult the official datasheet for valid substitute part numbers within the S29GL01GT/S29GL512T family that match the required package, speed grade, and temperature range.
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