Memory IC S29GL512T11FHIV13 product image

S29GL512T11FHIV13

$6.66
  • Description:IC FLASH 512MBIT PARALLEL 64FBGA
  • Series:GL-T
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)

SKU:adff3549e950 Category: Brand:

  
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S29GL512T11FHIV13 is listed in the Memory IC range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is IC FLASH 512MBIT PARALLEL 64FBGA. Review the specifications below when checking this part for your BOM.

Memory IC specifications for S29GL512T11FHIV13

  • Description:IC FLASH 512MBIT PARALLEL 64FBGA
  • Series:GL-T
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • Memory Type:Non-Volatile
  • Memory Format:FLASH
  • Technology:FLASH - NOR
  • Memory Size:512Mbit
  • Memory Organization:64M x 8
  • Memory Interface:Parallel
  • Clock Frequency:-
  • Write Cycle Time - Word, Page:60ns
  • Voltage - Supply:1.65V ~ 3.6V
  • Operating Temperature:-40°C ~ 85°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:64-LBGA
  • Supplier Device Package:64-FBGA (13x11)
  • Access Time:110 ns
  • Grade:-
  • Qualification:-

Memory IC datasheet and documents for S29GL512T11FHIV13

S29GL512T11FHIV13

Memory IC Overview

The Infineon S29GL512T11FHIV13 is a 512 Mbit Parallel NOR Flash memory device from the GL-T MirrorBit Eclipse Flash family. It utilizes 45-nm process technology and supports an asynchronous interface with Versatile I/O capabilities, allowing VIO to range from 1.65 V to VCC. The device features a 512-byte write buffer for efficient programming and provides uniform 128-KB sector erase architecture. It operates within a voltage range of 2.7 V to 3.6 V and includes hardware ECC for single-bit error correction.

Memory IC Feature Summary

  • Supports Versatile I/O with wide voltage range (1.65 V to VCC) for flexible system integration
  • Features a 512-byte write buffer enabling faster effective programming times compared to standard algorithms
  • Includes internal hardware Automatic Error Checking and Correction (ECC) for data integrity
  • Provides Advanced Sector Protection (ASP) with both volatile and non-volatile protection methods

Memory IC Applications

  • Embedded applications requiring high density and lower power consumption
  • Systems utilizing Execute-in-Place (XIP) functionality
  • Data storage solutions needing fast random access and page mode reads

Memory IC Procurement Notes

Verify the specific ordering suffix against the official Infineon datasheet to confirm package type, temperature grade, and I/O voltage specifications. Ensure compatibility with the target system's voltage levels and interface requirements before procurement.

Memory IC Selection Notes

Select this component for designs requiring 512 Mbit capacity with parallel interface support. Consider the Versatile I/O feature if the system requires logic levels below the core supply voltage. Evaluate the need for hardware ECC and sector protection features based on application reliability requirements.

Memory IC Part Context

This part belongs to the S29GL512T series, which offers 512 Mbit density using 45-nm MirrorBit technology. The GL-T family combines XIP performance with data storage density, featuring asynchronous read access and embedded algorithm controllers for program and erase operations.

Memory IC Replacement Considerations

Consult the official datasheet for valid substitute part numbers within the S29GL01GT/S29GL512T family that match the required package, speed grade, and temperature range.

S29GL512T11FHIV13S29GL512T11FHIV13
$6.66
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