S29PL064J55BFI070

Memory IC Overview

The S29PL064J55BFI070 is a 64 Mbit (4M x 16-bit) parallel NOR flash memory from the Infineon PL-J family. It features simultaneous Read/Write operations with zero latency across four independent banks, allowing concurrent program/erase and read actions. The device supports page mode for fast sequential access within an 8-word page. It operates on a single 3.0 V supply (2.7 V to 3.6 V) and utilizes Enhanced VersatileIO (VIO) controlled by the VIO pin. Key specifications include a maximum random access time of 55 ns and a page access time of 20 ns. It is housed in a 48-ball Fine-pitch BGA package.

Memory IC Feature Summary

• Simultaneous Read/Write architecture enables zero-latency switching between bank operations.
• Enhanced VersatileIO (VIO) allows I/O voltage tolerance determined by the VIO pin level.
• Flexible FlexBank architecture divides memory into four separate banks for independent operation.
• Supports persistent sector protection and password-based security mechanisms.

Memory IC Applications

• Industrial control systems requiring high reliability
• Automotive electronics applications
• Network infrastructure equipment
• Consumer electronics with code storage needs

Memory IC Procurement Notes

Verify the specific ordering suffix '070' corresponds to the 48-ball FBGA package and Industrial temperature grade (-40°C to +85°C). Confirm that the 'I' designation matches the required operating range. Ensure compatibility with the 3.0 V VIO setting specified for the PL064J series. Check current product status as some variants may be subject to discontinuation notices.

Memory IC Selection Notes

Select this component when simultaneous multi-bank operations are required to maximize system throughput. The 55 ns speed bin offers faster random access compared to standard 70 ns variants. Ensure the design accommodates the 48-ball FBGA footprint. Verify that the host system can support the 3.0 V VIO logic levels defined for this density class.

Memory IC Part Context

This part belongs to the S29PL-J family of 3.0 V Page Mode and Simultaneous Read/Write Flash memories. It shares architectural similarities with the PL127J and PL032J devices but differs in density and bank organization. The family is manufactured on 110-nm process technology and is backward compatible with JEDEC standards.

Memory IC Replacement Considerations

S29PL064J60BFI070 and S29PL064J70BFI070 are direct speed-bin replacements within the same package and feature set. For higher density requirements, consider the PL127J series. Lower density options include the PL032J series.