S29WS128N0PBAW012

Memory IC Overview

The S29WS128N0PBAW012 is a 128 Mbit (8 M x 16 bit) NOR flash memory device fabricated on 110 nm MirrorBit technology. It operates on a single 1.7 V to 1.95 V supply and supports simultaneous read/write operations with zero latency across separate banks. The device features an 84-ball FBGA package (8 mm x 11.6 mm), asynchronous access times of 80 ns, and synchronous burst frequencies up to 80 MHz. It includes a 32-word write buffer, hardware protection for top/bottom sectors, and supports Common Flash Interface.

Memory IC Feature Summary

• Simultaneous Read/Write operation with zero latency between separate banks
• Single 1.8 V power supply for read, program, and erase functions
• Advanced Sector Protection methods including persistent and password protection
• Secured Silicon Sector region consisting of 128 words each for factory and customer

Memory IC Applications

• Wireless applications requiring high density and low power consumption
• Systems utilizing Multi-Chip Package (MCP) look-ahead connections
• Embedded storage requiring simultaneous data access and modification

Memory IC Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm the specific ordering suffix matches the required speed option, packing type, and temperature range. Ensure compliance with RoHS standards and lead-free packaging requirements specified for the BA package variant. Check for moisture sensitivity handling instructions prior to assembly.

Memory IC Selection Notes

Select this component for designs requiring 1.8 V-only operation and simultaneous read/write capabilities. Consider the 84-ball FBGA package dimensions for PCB layout constraints. Evaluate the 110 nm process technology benefits regarding power consumption and density. Verify that the 80 ns access time meets system timing requirements for both asynchronous and synchronous burst modes.

Memory IC Part Context

This part belongs to the S29WS-N family of 1.8 Volt-only Simultaneous Read/Write Burst Mode Flash Memories originally developed by Spansion. The product has been retired and is not recommended for new designs. Infineon Technologies continues to offer the product to existing customers as part of its portfolio following the acquisition of Cypress, which had previously acquired Spansion.

Memory IC Replacement Considerations

The S29WS128P is the factory-recommended migration path and supersede for the S29WS128N series. Refer to the S29WS-P Family datasheet for specifications and ordering information when designing new products.