S34ML04G200TFV000

Memory IC Overview

The S34ML04G200TFV000 is a 4 Gbit Single-Level Cell (SLC) NAND flash memory component manufactured by Spansion. It features an asynchronous parallel interface with an x8 data bus width and a 512 M x 8 organization. The device operates within a voltage range of 2.7 V to 3.6 V, with a maximum active read current of 30 mA. It is housed in a TSOP-I-48 surface-mount package and supports an industrial operating temperature range from -40°C to +85°C.

Memory IC Feature Summary

• Supports asynchronous parallel access for standard embedded controller integration
• Utilizes Single-Level Cell architecture for high endurance and reliability
• Includes hardware-based error correction code support for data integrity

Memory IC Applications

• Embedded storage in automotive infotainment systems
• Industrial control system firmware storage
• Network infrastructure equipment configuration storage

Memory IC Procurement Notes

Verify the specific suffix 'V' against official SkyHigh Memory or Infineon documentation to confirm pinout compatibility and electrical characteristics relative to other TSOP variants. Ensure the source document explicitly lists this exact part number to avoid confusion with similar S34ML04G2 series components that may have different thermal or timing specifications.

Memory IC Selection Notes

Select this component when a 4 Gbit capacity with x8 parallel interface is required for space-constrained designs using TSOP packages. It is suitable for applications demanding high write endurance typical of SLC technology. Verify that the host system supports asynchronous parallel NAND protocols and operates within the specified 2.7 V to 3.6 V power supply range.

Memory IC Part Context

This part belongs to the S34ML04G2 series of SLC NAND flash memories originally developed by Spansion and now maintained by SkyHigh Memory following corporate restructuring. The series provides non-volatile storage solutions for embedded applications requiring robust data retention and high program/erase cycle endurance compared to multi-level cell alternatives.

Memory IC Replacement Considerations

Direct replacements include S34ML04G200TFI000 and S34ML04G200BHI000, provided the package type and voltage specifications match the design requirements. Cross-referencing datasheets is essential to ensure functional equivalence.