S3A1604R0M-AI1AT

Memory IC Overview

The Netsol S3A1604R0M-AI1AT is a 16Mb STT-MRAM component housed in an SOIC multichip package. It operates on a single 1.8V supply (1.71V–1.98V) and supports SPI interfaces including Single, Dual, and Quad modes with SDR up to 108MHz and DDR up to 54MHz. Key electrical parameters include standby current of 280µA and deep power down current of 25µA. The device offers unlimited read endurance, 10^14 write cycles, and 10-year data retention at 85°C. It features XIP support, hardware write protection, and a unique 64-bit ID.

Memory IC Feature Summary

• Utilizes Spin-Transfer-Torque MRAM technology for non-volatile storage without external ECC requirements.
• Supports Execute In Place (XIP) operations across various SPI interface modes.
• Includes dedicated augmented 256-byte area with user-configurable read/write protection.
• Provides hardware-based security via WP pin and block lock protection mechanisms.

Memory IC Applications

• Industrial control systems requiring high reliability and low power consumption
• Smart devices needing fast boot times and instant-on capabilities
• Cache storage applications replacing traditional flash or EEPROM

Memory IC Procurement Notes

Verify the specific suffix 'AI1AT' against official Netsol documentation to confirm package type and temperature grade. Ensure the 1.8V operating voltage aligns with system design requirements. Confirm RoHS compliance status through the manufacturer's latest datasheet revision before procurement.

Memory IC Selection Notes

Select this model for designs requiring high-speed serial access with low power standby characteristics. The 1.8V variant is suitable for modern low-voltage logic interfaces. Consider the industrial temperature range if deployed in harsh environments. Verify that the required memory density matches the 16Mb capacity.

Memory IC Part Context

This component belongs to the Netsol S3Axx04x0M family of SPI MRAM M-dies. It is designed as a drop-in replacement for legacy non-volatile memories in space-constrained applications. The STT-MRAM architecture provides superior endurance compared to floating-gate technologies.

Memory IC Replacement Considerations

Official substitutes within the same family include S3A1604V0M (3.3V version). Cross-voltage replacements require level shifting verification. No other direct cross-brand equivalents are confirmed in public documentation.