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S3D08065G is listed in the Single Diodes range at ChipApex. The manufacturer field lists SMC Diode Solutions. Its product description is DIODE SIL CARB 650V 23A TO263-2. Review the specifications below when checking this part for your BOM.
The S3D08065G is a silicon carbide Schottky diode rectifier manufactured by SMC Diode Solutions. It features a maximum DC reverse voltage (Vr) of 650 V and an average forward current (Io) of 23 A. The device utilizes a TO-263-2 surface mount package, also known as D2Pak with two leads and a tab. Key electrical parameters include a forward voltage (Vf) of 1.8 V at 8 A and a reverse leakage current of 51 µA at 650 V. The junction temperature range extends from -55°C to 175°C, supporting high-temperature operation.
Verify the specific suffix and package variant when ordering, as manufacturers may offer slight variations within the same base part number family. Confirm that the TO-263-2 footprint matches your PCB design constraints. Ensure compliance with RoHS3 and REACH regulations if required by your manufacturing standards. Cross-reference datasheet electrical limits against your circuit's peak voltage and current demands before finalizing procurement.
Select this component for applications demanding high thermal stability and reduced electromagnetic interference due to its fast switching characteristics. The 650 V rating provides sufficient headroom for standard 400 V bus systems. Consider the TO-263-2 package for efficient heat dissipation through the exposed tab. Evaluate the 1.8 V forward voltage drop against system efficiency targets at the expected load current of 8 A or higher.
This component belongs to the S3D series of silicon carbide Schottky diodes from SMC Diode Solutions. The series is engineered for high-power density applications where traditional silicon rectifiers face limitations in speed and thermal management. The S3D08065G specifically addresses needs for robust performance in harsh environments, leveraging SiC material properties to achieve higher breakdown voltages and lower on-state resistance compared to equivalent silicon devices.
Direct replacements must match the 650 V reverse voltage, 23 A current rating, and TO-263-2 package. Verify that substitute parts also exhibit zero reverse recovery time to maintain circuit timing and efficiency. Check thermal resistance values to ensure adequate heat sinking compatibility. Note that pinout configurations may vary slightly between manufacturers even within the same package type.
The S3D08065G has no reverse recovery time, which is a characteristic feature of silicon carbide Schottky diodes.
The maximum operating junction temperature for the S3D08065G is 175°C.
No, the switching speeds of the S3D08065G are independent of operating temperature.
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