S3R1616V1M-XI70T

Memory IC Overview

The S3R1616V1M-XI70T is a 16Mb Parallel Peripheral Interface MRAM utilizing STT-MRAM technology. It operates on a single 1.71V to 1.98V supply and supports x16 or x8 I/O modes with asynchronous page mode access. Interpage read cycle time is 70ns, intrapage read is 15ns, interpage write is 240ns, and intrapage write is 15ns. Standby current is 300uA for the 16Mb density. The device provides non-volatile data retention of 10 years at 85°C and endurance of 10^14 write cycles without external ECC.

Memory IC Feature Summary

• Non-volatile STT-MRAM architecture eliminates the need for backup batteries and external error correction circuits.
• Asynchronous parallel interface with page mode support enhances random and sequential data transfer efficiency.
• High endurance and long-term data retention ensure reliable operation in industrial environments.

Memory IC Applications

• Industrial code storage
• Real-time data logging
• System backup memory
• Working memory in embedded designs

Memory IC Procurement Notes

Verify the specific suffix 'XI70T' against official NETSOL documentation to confirm package type and temperature grade. Ensure the ordering part number matches the required density (16Mb) and I/O width (x16). Confirm RoHS compliance status for the selected package variant before procurement.

Memory IC Selection Notes

Select this component when replacing FRAM, low-power SRAM, or nvSRAM in systems requiring non-volatility and high write endurance. Consider the 1.8V operating voltage and parallel interface requirements. Evaluate the 48FBGA or TSOP2 package options based on PCB layout constraints and thermal management needs.

Memory IC Part Context

This model belongs to the S3R16(80)xxR1M series of 16Mb and 8Mb PPI MRAMs. The series features Spin-Transfer-Torque technology designed for industrial applications. It offers flexible I/O configurations and robust performance metrics suitable for demanding storage tasks.

Memory IC Replacement Considerations

Directly replaces FRAM, low-power SRAM, and nvSRAM devices with similar pinouts. Verify compatibility with existing system power supplies and interface logic levels. No external ECC circuitry is required for this replacement.

Memory IC FAQ

Does the S3R1616V1M require external ECC?

No, the device does not require external ECC due to its inherent data integrity characteristics.

What is the data retention period?

The data retention is guaranteed for 10 years at an ambient temperature of 85°C.