S3R4016R1M-XI70T

Memory IC Overview

The S3R4016R1M-XI70T is a 4Mb Parallel Peripheral Interface MRAM utilizing STT-MRAM technology. It operates on a single 1.71V to 1.98V supply and supports x16 I/O mode with asynchronous page mode access. Key timing parameters include a minimum interpage read cycle time of 70ns, an intrapage read cycle time of 15ns, and an interpage write cycle time of 240ns. The device features unlimited read endurance and 10^14 write cycles, ensuring data retention for 10 years at 85°C. It is designed for industrial applications within a -40°C to 85°C temperature range.

Memory IC Feature Summary

• Supports parallel asynchronous interface with dedicated page mode functionality to enhance read and write performance through internal buffering.
• Features non-volatile STT-MRAM memory cells that provide virtually unlimited read endurance and high write durability without requiring external error correction.
• Enables independent lower and upper byte control in x16 I/O mode via dedicated LB and UB pins for flexible data handling.

Memory IC Applications

• Industrial code storage
• Real-time data logging
• System backup memory
• Working memory in embedded designs

Memory IC Procurement Notes

Verify the specific package type required for your design, as the S3R40xxR1M series is available in both 44TSOP2 and 48FBGA configurations. Confirm that the ordering suffix corresponds to the desired package and temperature grade. Ensure compatibility with existing PCB layouts by checking pin assignments against current schematics before finalizing procurement orders.

Memory IC Selection Notes

Select this component when replacing FRAM, low-power SRAM, or nvSRAM to simplify system architecture. Choose the x16 I/O mode if independent byte access is necessary, or x8 mode for standard word access. Consider the 70ns interpage read speed for general random access requirements and the 15ns intrapage speed for sequential burst operations within the same page.

Memory IC Part Context

This part belongs to the Netsol S3R40xxR1M family of 4Mb PPI MRAM devices. The family includes variants supporting different I/O widths, specifically x8 and x16 modes. These devices are engineered to offer high reliability and low power consumption, targeting robust industrial environments where data integrity and long-term retention are critical operational requirements.

Memory IC Replacement Considerations

The datasheet indicates these packages are compatible with similar low-power volatile and non-volatile products. Verify pinout compatibility with legacy SRAM or nvSRAM components to ensure direct replacement without hardware redesign. Check voltage levels and timing constraints to confirm seamless integration into existing systems.

Memory IC FAQ

How does the page mode function improve performance?

Page mode allows subsequent reads or writes within the same page to occur at a faster intrapage cycle time (15ns) compared to the standard interpage cycle time (70ns for read), significantly boosting throughput for sequential data access.

What is the data retention specification?

The device guarantees data retention for 10 years at an operating temperature of 85°C.

Can the device operate with a single power supply?

Yes, the S3R4016R1M operates using a single Vcc supply ranging from 1.71V to 1.98V.