S3R4016V1M-XI70T

Memory IC Overview

The S3R4016V1M-XI70T is a 4Mb Parallel Peripheral Interface (PPI) MRAM utilizing Spin-Transfer-Torque technology. It operates on a single 2.7V to 3.6V supply and supports x16 I/O mode with asynchronous page mode access. Key timing parameters include a minimum interpage read cycle time of 70ns, an intrapage read cycle time of 15ns, and an intrapage write cycle time of 15ns. The device features unlimited read endurance and 10^14 write cycles, with data retention of 10 years at 85°C. Standby current is typically 235uA.

Memory IC Feature Summary

• Non-volatile STT-MRAM architecture providing virtually unlimited read endurance and high write durability without requiring external error correction codes.
• Asynchronous parallel interface supporting both random access and optimized page mode operations for enhanced throughput.
• Single-byte control capability in x16 I/O mode allowing independent access to lower and upper data bytes via dedicated control pins.

Memory IC Applications

• Industrial code storage applications
• Data logging systems
• Backup memory units
• Working memory replacements for FRAM or nvSRAM

Memory IC Procurement Notes

Verify the specific suffix 'XI70T' against official ordering tables to confirm package type and temperature grade. Ensure compatibility with industrial operating ranges (-40°C to 85°C). Confirm pin configurations for DNU pins are handled correctly during PCB layout to prevent electrical issues.

Memory IC Selection Notes

Select this component when non-volatility and high endurance are critical compared to volatile SRAM. Consider the x16 interface width and page mode benefits for systems requiring frequent sequential access. Evaluate power consumption profiles against system battery life requirements.

Memory IC Part Context

This part belongs to the S3R40xxV1M series of 4Mb PPI MRAMs from Netsol. It is designed as a drop-in replacement for low-power SRAM or nvSRAM in industrial designs. The series includes variants like S3R4008V1M for different I/O widths.

Memory IC Replacement Considerations

Direct substitutes within the same density and interface type should be evaluated based on pin compatibility and timing specifications. Verify that alternative MRAM or nvSRAM devices support similar page mode operations and byte control features.