S3R6416V1M-XI70T

Memory IC Overview

The S3R6416V1M-XI70T is a 64Mb Parallel Peripheral Interface (PPI) MRAM utilizing Spin-Transfer-Torque technology. It operates on a single 2.70V to 3.60V supply and features an asynchronous interface with page mode support. The device offers a minimum interpage read cycle time of 70ns and intrapage access of 15ns, alongside unlimited read endurance and 10^14 write cycles. Data retention is specified at 10 years at 85°C without external ECC. It is housed in a 48FBGA package and supports industrial temperatures from -40°C to 85°C.

Memory IC Feature Summary

• Non-volatile STT-MRAM architecture providing data persistence without backup power.
• Asynchronous parallel interface with page mode for enhanced sequential read/write performance.
• High endurance supporting unlimited reads and 10^14 write cycles per page.
• Eliminates the need for external Error Correction Code (ECC) circuitry.

Memory IC Applications

• Industrial code storage
• Real-time data logging
• Backup memory systems
• Working memory in embedded designs

Memory IC Procurement Notes

Verify that the specific suffix XI70T corresponds to the 70ns speed grade and Industrial temperature range (-40°C to 85°C) as defined in the Netsol part numbering system. Confirm the 48FBGA package dimensions match your PCB layout requirements. Ensure voltage supply rails strictly adhere to the 2.70V to 3.60V specification for the V1M variant to prevent operation outside recommended conditions.

Memory IC Selection Notes

Select this component when non-volatility and high write endurance are critical, replacing traditional SRAM or Flash solutions. The x16 I/O organization suits applications requiring wider data buses. Consider the 15ns intrapage access time for burst operations. Verify compatibility with existing parallel interfaces, noting the absence of internal pull-up resistors on the Chip Select pin which may require external components.

Memory IC Part Context

This device belongs to the S3R6416x1M family of 64Mb PPI MRAMs. It shares architectural similarities with the S3R6416R1M but differs in operating voltage (3.3V vs 1.8V). Both variants utilize the same 48FBGA package and offer identical timing characteristics and endurance profiles, differing primarily in power supply requirements and standby current consumption.

Memory IC Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Designers should verify pinout and electrical compatibility if considering alternative vendors' MRAM or nvSRAM devices, particularly regarding the lack of internal pull-ups on CS and specific power-up sequencing requirements.