S6R1616W1B-XI10T

Memory IC Overview

The Netsol S6R1616W1B-XI10T is a 16Mb Asynchronous Fast SRAM organized as 1M x 16 bits. It utilizes advanced CMOS process and 6-TR cell technology for high-speed circuit applications. The device supports a wide power supply range of 1.65V to 3.6V, ensuring compatibility with various logic levels. It features TTL-compatible inputs and outputs with three-state outputs. Key performance metrics include an address access time (tAA) of 10ns at 2.5V and 3.3V, and a standby current (ISB1) of 5.0mA. The component operates within the industrial temperature range (-40°C to +85°C).

Memory IC Feature Summary

• Supports data byte control in x16 mode via dedicated lower-byte (LB) and upper-byte (UB) pins.
• Features fast output enable pin operation that is faster than address access time during read cycles.
• Designed for high-reliability and high-speed system applications using advanced CMOS technology.

Memory IC Applications

• High-speed system memory buffers
• Industrial embedded systems requiring low latency
• Data acquisition systems

Memory IC Procurement Notes

Verify the specific speed grade suffix 'XI' corresponds to the required 10ns access time for your voltage conditions. Confirm the package type matches the design footprint, as this part number indicates the FBGA variant. Ensure the operating voltage aligns with the 1.65V to 3.6V specification. Check for RoHS compliance status if required by your manufacturing standards. Validate the industrial temperature range suitability for your environmental constraints.

Memory IC Selection Notes

Select this component when a 16-bit data width is required for 16Mb capacity. Choose the FBGA package for compact board space compared to TSOP options. Consider the wide voltage range if the system operates between 1.65V and 3.6V. Verify that the 10ns access time meets the system timing requirements. Ensure the design accommodates the specific pinout for LB and UB controls if byte-level access is needed.

Memory IC Part Context

This part belongs to the S6R16xxW1B series of asynchronous FAST SRAMs from Netsol. The series includes variants with different speeds and packages. The 'W' denotes the wide voltage range capability. The '16' in the model name indicates the 1M x 16 organization. This series is designed to replace older generation SRAMs in high-performance applications.

Memory IC Replacement Considerations

Direct substitutes may include other 16Mb 16-bit asynchronous SRAMs with similar 10ns access times. Verify pin compatibility and voltage ranges before substitution. Cross-reference with ISSI or GSI Technology equivalents if available. Ensure the replacement supports the same industrial temperature range and package dimensions.