ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
S6R3216W1B-XI10T is listed in the Memory IC range at ChipApex. The manufacturer field lists Netsol. Its product description is ASYNC. FAST SRAM 32M BIT, 2MX16,. Review the specifications below when checking this part for your BOM.
Memory IC specifications for S6R3216W1B-XI10T
- Description：ASYNC. FAST SRAM 32M BIT, 2MX16,
- Series：-
- Mfr：Netsol
- Package：Tape & Reel (TR),Cut Tape (CT)
- Memory Type：Volatile
- Memory Format：SRAM
- Technology：SRAM - Asynchronous
- Memory Size：32Mbit
- Memory Organization：2M x 16
- Memory Interface：Parallel
- Clock Frequency：-
- Write Cycle Time - Word, Page：-
- Voltage - Supply：1.65V ~ 3.6V
- Operating Temperature：-40°C ~ 85°C
- Mounting Type：Surface Mount
- Package / Case：48-FBGA
- Supplier Device Package：48-FBGA
- Access Time：10 ns
- Grade：-
- Qualification：-
Memory IC datasheet and documents for S6R3216W1B-XI10T
Memory IC Overview
The S6R3216W1B-XI10T is a 32Mb Asynchronous Fast SRAM organized as 2M words by 16 bits. It operates within a wide voltage range of 1.65V to 3.6V and supports industrial temperature ranges (-40°C to 85°C). The device features fast access times of 10ns at 3.3V/2.5V and 12ns at 1.8V, with standby current typically at 10mA. It utilizes advanced CMOS process and 6-TR cell technology, packaged in a standard 48FBGA format.
Memory IC Feature Summary
- Supports data byte control for independent lower and upper byte access
- Features TTL compatible inputs and outputs with three-state capability
- Designed for high-reliability and high-speed system applications
Memory IC Applications
- High-reliable system memory
- High-speed circuit technology
- Industrial temperature environment storage
Memory IC Procurement Notes
Verify the specific speed grade suffix (XI10) against the official ordering information table to confirm the exact timing parameters and voltage compatibility. Ensure the package type matches the required 48FBGA footprint and that the operating temperature range aligns with industrial specifications.
Memory IC Selection Notes
Select this component when a 32Mb capacity with 16-bit width is required for asynchronous operations. Consider the 10ns access time for systems needing faster read/write cycles at higher voltages, or the 12ns option for lower voltage operation. Verify power consumption requirements against the specified operating and standby currents.
Memory IC Part Context
This part belongs to Netsol's 32Mb Async. FAST SRAM B-die series. It shares the same density and organization as other variants in the S6R3216W1B family but differs in speed grades and voltage support configurations. The device is designed to replace older generation SRAMs requiring similar pinouts and functionality.
Memory IC Replacement Considerations
Direct substitutes include other S6R3216W1B variants with matching speed grades. Cross-vendor replacements must match the 2M x 16 organization, 48FBGA package, and 10ns access time specifications.
Memory IC FAQ
What is the maximum standby current for the S6R3216W1B-XI10T?
The typical standby current (ISB1) is 10mA, with a maximum of 36mA under specified conditions.
How does the device handle byte-level data access?
It allows independent access to lower and upper bytes using the LB and UB control pins, supporting both full 16-bit and individual 8-bit word operations.
Explore related parts through Memory, Integrated Circuits (ICs), all product categories, ChipApex homepage.
