S6R3216W1B-YI10T

Memory IC Overview

The S6R3216W1B is a 32Mb Asynchronous Fast SRAM organized as 2M words by 16 bits. It utilizes advanced CMOS process and 6-TR cell technology for high-speed circuit applications. The device supports a wide power supply range of 1.65V to 3.6V, featuring TTL-compatible inputs and outputs with three-state capability. It offers fast access times of 10ns or 12ns depending on voltage. Byte control signals (LB, UB) allow independent access to lower and upper data bytes in x16 mode. The component operates within an industrial temperature range (-40°C to +85°C) and is housed in a standard 48-ball FBGA package.

Memory IC Feature Summary

• Advanced CMOS fabrication using 6-TR cell technology for high reliability and speed
• Wide operating voltage range from 1.65V to 3.6V with low standby current
• Independent byte control for accessing lower and upper data segments
• TTL-compatible logic levels with three-state output drivers

Memory IC Applications

• High-reliability system memory buffers
• High-speed data acquisition systems
• Industrial control applications requiring fast random access
• Communication equipment cache memory

Memory IC Procurement Notes

Verify the specific speed grade suffix (e.g., -XI10) against the required timing parameters. Confirm that the 48FBGA package dimensions match the PCB footprint. Ensure the design supports the specified voltage ranges for both operation and data retention. Check compatibility with the target industrial temperature environment.

Memory IC Selection Notes

Select this part when a 32Mb capacity with 16-bit width is required. Choose based on the necessary access time (10ns vs 12ns) determined by the system clock and voltage level. Consider the 48FBGA package constraints for layout. Verify that the low standby current meets power management requirements.

Memory IC Part Context

This component belongs to Netsol's S6R32xxx1M series of asynchronous fast SRAMs. It shares architectural similarities with other members like the S6R3216W1M but differs in specific speed grades and packaging options. The series is designed for dense, high-speed memory applications using industry-standard interfaces.

Memory IC Replacement Considerations

Direct substitutes include other 32Mb 2Mx16 async SRAMs with compatible pinouts and timing. Verify voltage tolerance and package dimensions before substitution. Cross-reference with similar offerings from other manufacturers ensuring identical functional specifications.