S6R8016W1B-XI10T

Memory IC Overview

The S6R8016W1B-XI10T is an 8Mb Asynchronous Fast SRAM organized as 512K words by 16 bits. It operates within a wide voltage range of 1.65V to 3.6V and supports access times of 8ns, 10ns, or 12ns depending on the supply voltage. The device features TTL-compatible inputs and outputs with three-state capabilities. It includes lower and upper byte control signals for selective data access in x16 mode. The component is housed in a 48-ball FBGA package and is designed for industrial temperature ranges.

Memory IC Feature Summary

• Utilizes advanced CMOS process and 6-TR based cell technology for high-speed circuit applications.
• Supports independent lower and upper byte access via dedicated LB and UB control pins.
• Features TTL-compatible logic levels and three-state outputs for flexible system integration.
• Designed for high-reliability environments with robust data retention characteristics.

Memory IC Applications

• High-speed data buffering in communication systems
• Cache memory in embedded processors
• Industrial control systems requiring fast random access
• High-performance computing hardware

Memory IC Procurement Notes

Verify that the ordering suffix matches the required speed grade and package type. Confirm the specific voltage variant aligns with the target system's power supply specifications. Ensure the industrial temperature rating meets the operational environmental requirements. Cross-reference the pinout configuration with the design schematic to prevent interface mismatches during implementation.

Memory IC Selection Notes

Select this component when a 16-bit wide asynchronous memory interface is required. Choose the 10ns speed grade if the system clock allows for moderate access latency while maintaining low power consumption. Consider the FBGA package for compact board layouts compared to TSOP alternatives. Evaluate the standby current specifications against battery-operated constraints if applicable.

Memory IC Part Context

Netsol Corporation manufactures the S6R80xxW1B series as part of their asynchronous FAST SRAM lineup. This family targets applications demanding high reliability and fast response times. The S6R8016W1B variant specifically provides a 16-bit data path, distinguishing it from the 8-bit S6R8008W1B model within the same density class.

Memory IC Replacement Considerations

Direct substitutes include other 8Mb 512Kx16 asynchronous SRAMs with compatible pinouts and timing parameters. Verify voltage compatibility and package dimensions before substitution. Check for equivalent byte control functionality if operating in x16 mode.