S70FL01GSDPBHIC13

Memory IC Overview

The Infineon S70FL01GSDPBHIC13 is a 1 Gbit (128 Mbyte) NOR flash memory device constructed as a dual-die stack of two S25FL512S dies. It utilizes 65 nm MirrorBit technology with an Eclipse architecture and operates on a 3.0 V core supply voltage ranging from 2.7 V to 3.6 V. The interface supports standard SPI with multi-I/O capabilities, including Quad and Dual modes, and offers Double Data Rate (DDR) options. The component features uniform 256-kByte sectors, a 512-byte page programming buffer, and advanced sector protection. It is housed in a BGA-24 package with a 5x5 ball footprint and is rated for Industrial Plus temperature grades.

Memory IC Feature Summary

• Dual-die stack architecture enabling independent access to each die via separate chip selects.
• Supports multiple read command modes including Normal, Fast, Dual, Quad, and corresponding DDR variants.
• Integrated security features including One Time Programmable (OTP) array and hardware/software block protection.
• AutoBoot capability allows automatic execution of read commands at power-up or reset.

Memory IC Applications

• Industrial systems requiring high-density non-volatile storage.
• Automotive electronics meeting AEC-Q100 reliability standards.
• IoT endpoints needing compact form factor and low power consumption.
• Smart devices such as wearables and hearables.

Memory IC Procurement Notes

Verify the specific ordering suffix against the manufacturer's valid combinations table to ensure correct package type, speed option, and temperature grade. Confirm that the requested configuration matches the intended application requirements, particularly regarding the Industrial Plus temperature range and BGA-24 packaging. Check for any recent product discontinuation notifications or lifecycle changes before finalizing procurement plans.

Memory IC Selection Notes

Select this component when a 1 Gbit capacity is required in a small BGA-24 footprint. Ensure the host system supports the necessary SPI multi-I/O commands and can handle the dual-die management logic if simultaneous operations are needed. Verify that the operating voltage range aligns with the system's power supply rails and that the thermal resistance characteristics fit the PCB design constraints.

Memory IC Part Context

This part belongs to the S70FL01GS family of 1 Gbit SPI Flash memories. It is compatible with the S25FL-A, S25FL-K, and S25FL-P SPI families in terms of serial command set and footprint. The device leverages Infineon's 65 nm MirrorBit process technology to provide high endurance and data retention specifications suitable for demanding industrial and automotive environments.

Memory IC Replacement Considerations

Direct replacements within the same family include parts with different speed grades or packaging options, such as S70FL01GSAGMFI013 for SOIC packages or other BGA variants. Ensure that any substitute maintains the same density, interface compatibility, and temperature rating. Verify pinout and electrical characteristics to guarantee seamless integration without circuit redesign.

Memory IC FAQ

How does the dual-die stack architecture affect sequential reads?

Sequential reads are not supported across the boundary between the first and second flash die. To read data spanning both dies, the user must read out the first die via CS1# and then switch to reading the second die via CS2#.

Is the Versatile I/O power supply (VIO) supported in this device?

No, the VIO power supply is not supported in the standard configuration of the S70FL01GS device. The corresponding pins are reserved for future use (RFU).

What is the minimum program-erase cycle endurance?

The device guarantees a minimum of 100,000 program-erase cycles.