S72XS256RE0AHBH13

Memory IC Overview

The S72XS256RE0AHBH13 is a Multi-Chip Product (MCP) integrating a 256 Mb MirrorBit NOR Flash and a 256 Mb DDR DRAM. It operates on a single 1.8V supply with a range of 1.7V to 1.95V. The Flash component supports burst speeds up to 108 MHz, while the DDR DRAM runs at 166 MHz. The device utilizes an Address-High, Address-Low, Data Multiplexed interface for the Flash and standard DDR protocols for the DRAM. It is housed in an 8.0 x 8.0 mm, 133-ball Fine-Pitch Ball Grid Array package.

Memory IC Feature Summary

• Stacked architecture combining high-density NOR Flash and high-speed DDR DRAM within a compact footprint.
• Supports asynchronous access and burst mode operations for the Flash memory component.
• Includes a Factory Secured Silicon Area containing a random 128-bit Electronic Serial Number.
• Features split bus design allowing independent operation of Flash and DRAM components.

Memory IC Applications

• Wireless communication systems requiring combined code storage and data buffering.
• Industrial embedded applications needing robust non-volatile storage alongside volatile memory.
• Portable consumer electronics utilizing space-constrained multi-chip packaging solutions.

Memory IC Procurement Notes

Verify the specific ordering suffix against the manufacturer's Valid Combinations table to ensure correct packing type and temperature rating. Confirm that the required flash boot configuration matches the available top or bottom options. Check for RoHS compliance status as older revisions may not meet current environmental standards. Ensure PCB layout accounts for Do Not Use and Reserved for Future Use ball connections to prevent routing conflicts.

Memory IC Selection Notes

Select this MCP when system design requires simultaneous high-capacity non-volatile storage and high-bandwidth volatile memory in a limited board area. Consider the 1.8V power supply requirement and verify compatibility with host I/O voltage levels. Evaluate the need for burst mode Flash access versus asynchronous requirements. Assess thermal performance needs based on the specified industrial or wireless temperature ranges.

Memory IC Part Context

This component belongs to the S72XS-R series of Multi-Chip Products from Cypress Semiconductor. The series integrates MirrorBit technology for the Flash die and standard DDR specifications for the DRAM die. It represents a solution for applications demanding high density and speed within small form factors, distinct from standalone memory ICs.

Memory IC Replacement Considerations

Direct replacements are limited due to the proprietary stacked architecture. Verify pin-to-pin compatibility with other 133-ball FBGA MCPs if considering alternative vendors. Cross-reference electrical specifications such as access times and operating voltages carefully. Consult official substitution guides for discontinued variants within the same product family.

Memory IC FAQ

What is the function of the F-AVD# signal?

The F-AVD# signal indicates that a valid address is present on the address inputs. In burst mode, its low state causes the starting address to be latched on the rising edge of the clock.

Where is the Electronic Serial Number stored?

The 128-bit Electronic Serial Number is stored in the Factory Secured Silicon Area within the address range 000000h to 000007h.

How does the Flash interface handle address and data?

The Flash component uses an Address-High, Address-Low, Data Multiplexed interface where ADQ15 through ADQ0 serve as multiplexed address and data lines.