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S80KS5123GABHB020 is listed in the Memory IC range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is IC PSRAM 512MBIT SPI/OCTL 24FBGA. Review the specifications below when checking this part for your BOM.
Memory IC specifications for S80KS5123GABHB020
- Description：IC PSRAM 512MBIT SPI/OCTL 24FBGA
- Series：HYPERRAM™
- Mfr：Infineon Technologies
- Package：Tray
- Memory Type：Volatile
- Memory Format：PSRAM
- Technology：PSRAM (Pseudo SRAM)
- Memory Size：512Mbit
- Memory Organization：64M x 8
- Memory Interface：SPI - Octal I/O
- Clock Frequency：200 MHz
- Write Cycle Time - Word, Page：35ns
- Voltage - Supply：1.7V ~ 2V
- Operating Temperature：-40°C ~ 105°C (TA)
- Mounting Type：Surface Mount
- Package / Case：24-VBGA
- Supplier Device Package：24-FBGA (6x8)
- Access Time：35 ns
- Grade：-
- Qualification：-
Memory IC datasheet and documents for S80KS5123GABHB020
Memory IC Overview
The Infineon S80KS5123GABHB020 is a 512-Mbit HYPERRAM self-refresh DRAM featuring an Octal xSPI interface. It operates at a maximum clock rate of 200 MHz with DDR transfers, achieving up to 400 MBps throughput. The device uses a 24-ball FBGA package and supports industrial temperature ranges from -40 °C to +85 °C. Key electrical parameters include a 1.8 V supply voltage, 35 ns access time, and configurable burst lengths.
Memory IC Feature Summary
- Self-refreshing pseudo-static RAM architecture eliminates host refresh management
- Octal xSPI interface provides high bandwidth with low pin count
- Configurable burst modes including linear and wrapped sequences
- Integrated power conservation modes such as hybrid sleep and deep power down
Memory IC Applications
- Automotive telematics control units
- Industrial automation systems
- Machine vision applications
- Battery-powered consumer electronics
Memory IC Procurement Notes
Verify the specific ordering suffix against the manufacturer's current roadmap to confirm availability and lead times. Ensure the selected variant matches the required operating temperature range and package type for your design. Cross-reference the datasheet revision history for any updates to electrical specifications or timing constraints before finalizing procurement.
Memory IC Selection Notes
Select this component when a high-density memory solution with simple SPI-like interface compatibility is required. The dual-die architecture necessitates a minimum 2X latency configuration for all transactions. Consider the power consumption profiles in standby and deep power down modes if energy efficiency is a critical design constraint for the target application.
Memory IC Part Context
This part belongs to the KS-3 series of HYPERRAM devices, representing a generation of pseudo-static RAM that combines DRAM density with SRAM ease of use. It utilizes 25-nm technology to achieve high performance within a compact footprint. The series is designed to support data-intensive operations in automotive and industrial environments requiring reliable, high-speed memory access.
Memory IC Replacement Considerations
S80KS5123GABHV020
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