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The SB007-03C-TB-E is a single Schottky barrier rectifier manufactured by onsemi. It features a silicon construction with a maximum repetitive peak reverse voltage of 30 V and an average forward current rating of 70 mA. The device exhibits a typical forward voltage drop of 550 mV at the rated current and a maximum reverse leakage current of 5 uA. It supports a forward surge current of 2 A and operates within a junction temperature range of -55°C to +125°C. The component is available in surface-mount packaging formats including cut tape and reel.
Verify the exact part number against official manufacturer documentation, as suffixes may indicate specific packaging or compliance variations. Confirm RoHS status and material composition declarations through authorized distributor channels or the manufacturer's compliance database before integration into production designs.
Select this component for applications requiring low forward voltage loss at small signal currents up to 70 mA. Ensure the circuit design accounts for the 30 V reverse voltage limit and thermal management within the specified operating temperature range. Verify package compatibility with automated assembly equipment when choosing between cut tape or reel options.
This device belongs to the SB007 series of Schottky diodes from onsemi, which are designed for general-purpose rectification in low-power electronics. The product line emphasizes efficiency and compact form factors suitable for modern surface-mount manufacturing processes.
Cross-reference with other 30 V, 70 mA Schottky diodes in SC-59 or SOT-23 packages. Verify pinout compatibility and electrical parameter equivalence before substitution.